IPC26N12NX2SA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPC26N12NX2SA1 is a well-known and widely used power MOSFET. It belongs to the category of transistors and specifically to the field-effect transistors (FETs), more specifically to the metal-oxide-semiconductor field-effect transistors (MOSFETs), and even more specifically to the single type of such devices. This means that it is used in mono-channel applications where a single MOSFET serves as the only device between the power supply/load and the logic circuits.

MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor. It is a voltage-controlled device, meaning that a small input voltage applied to the “gate” lead of the device can be used to control the flow of current in the “source” and “drain” leads. The MOSFET is a unipolar device, meaning that it uses only electrons for current conduction, and does not depend on the presence of holes for conduction. It is also important to mention that the MOSFET is voltage driven, meaning that, unlike typical transistors, it does not require an external current source to be applied to the gate.

The IPC26N12NX2SA1 MOSFET is a silicon-based device that is specifically designed to exhibit high performance when working as a switch. It is designed for low-voltage, low-power applications, so it is a relatively small device – just 5 millimetres long. It has a maximum drain-to-source current of 26A and a maximum voltage of 30V. It has an on-resistance of 0.037 ohm, making it well-suited for use in low-impedance circuits.

When using a MOSFET as a switch, it is necessary to take into consideration the working principles of the device. The ability to control the current flow of a MOSFET by applying a relatively small voltage to the gate is a result of the interaction between the gate and the source/drain electrodes. When the gate voltage is lower than the source/drain voltage, the electric field between the gate and the source/drain creates an inversion layer and current flows from the source to the drain. If, on the other hand, the gate voltage is higher than the drain/source voltage, the inversion layer is suppressed, and current does not flow.

The IPC26N12NX2SA1 MOSFET can be used in a variety of different applications, from low-power switching to high-power switching of motors and loads. In addition, it can be used for voltage regulation and for logic level shifting applications. When used for switching, the MOSFET offers fast switching times and can be used to replace electromechanical switches, such as relays.

The IPC26N12NX2SA1 MOSFET is an important device in the field of electronics with its wide range of application fields and well-studied working principles. Its combination of high current and low-voltage capabilities make it an ideal choice for many low-power applications, while its fast switching times make it a viable option for high-power switching applications. As such, it has gained widespread adoption in the field of electronics, and continues to be a popular choice for its many useful features.

The specific data is subject to PDF, and the above content is for reference