IPD100N04S402ATMA1

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IPD100N04S402ATMA1 is a trench-gate, controlled-avalanche rated, dual N-channel HEXFET power MOSFET. This device is designed as a switch for high-voltage, high-power applications and can be used in a wide range of low and medium power applications like DC-DC converters, telecommunication, motor control and other general purpose applications. This MOSFET is ideal for use in applications that require high-speed switching.

This MOSFET can be used in a wide range of applications from low power switches to high power applications like DC-DC converters, telecom and motor control. IPD100N04S402ATMA1 has low gate charge technology and very low input capacitance that result in high switching frequencies. Because of this, this MOSFET can achieve high-speed switching with still maintaining good thermal characteristics. This device is also very efficient at blocking high voltage and high dV/dt in its wide range of applications. It is capable of blocking voltages exceeding 600V.

The IPD100N04S402ATMA1 features an advanced trench process technology which achieves low on-state resistance and low gate charge. It is also designed to withstand a high amount of dV/dt. This MOSFET has a deep body diode which helps in limiting the voltage transient (or surge) produced by re-commutation in fast switching applications. The on-state resistance of this device is very low, which helps in high efficiency in applications like DC-DC converters.

The working principle of IPD100N04S402ATMA1 is based on the electrical field effect. This principle basically states that a voltage applied to the gate-drain junction of the MOSFET will create an electric field. This electric field is used to control the magnitude of the current flowing through the MOSFET. The amount of current allowed to pass through the MOSFET depends on the applied voltage to the gate terminal. Higher voltages increase the electric field thereby increasing the current flow through the MOSFET.

The main application field of IPD100N04S402ATMA1 is high-voltage, fast switching applications. This includes DC-DC converters, motor control applications, and other high-power electronic circuits. The high-speed switching capability, low gate charge technology and low on-state resistance make this device ideal for fast switching applications requiring high current capability. Also, its high voltage rating makes it suitable for high voltage applications as well.

In summary, IPD100N04S402ATMA1 is an ideal device for high-voltage applications that require high-speed switching, low on-state resistance, and low gate charge. This device has a deep body diode that helps in limiting the voltage transient and its trench-gate controlled-avalanche rated technology ensures efficient performance in fast switching applications. It is versatile enough to be used in a wide range of applications, from low power switches to high power DC-DC converters.

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