IPD12CN10NGBUMA1

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The IPD12CN10NGBUMA1 is a single field effect transistor (FET) in a DPAK package. It is one of the highest performance FETs available for switching and amplification applications. This device is designed for applications such as consumer electronics, automotive, industrial, and military applications. In addition to its high performance, it offers excellent thermal envelope and EMI performance.

The IPD12CN10NGBUMA1 is based on advanced Silicon-on-Insulator (SOI) technology, which enables low power consumption and high switching speeds. It has a gate voltage range of 0V to 4.9V and a drain-source voltage range of 0V to 25V. It also features a high breakdown voltage and excellentGate-source and drain-source capacitances for maximum performance.

The IPD12CN10NGBUMA1 can be used in applications requiring fast switching, high Precision switching, high power efficiency, and reliable operation. It is an excellent choice for applications that require a high static load and are subjected to extreme environmental conditions. It can also be used for high-speed data acquisition systems and high-efficiency current sinks. It can be used for high-frequency analog applications, such as a broadband amplifier.

The IPD12CN10NGBUMA1 is constructed of a substrate with two metal layers - one on the top and one on the bottom - to form a four-layer structure. The top and bottom metal layers of the substrate form the source and drain electrodes, with the two layers remaining in between acting as the gate and body. The transistor\'s operation is based on the depletion and accumulation of mobile charge carriers in different regions of the junction at different gate voltages. The charge is created by the depletion region, which is an inherently insulating region topologically adjacent to the pn junction. The change in charge causes a change in voltage, which then determines the transistor\'s switching characteristics.

The IPD12CN10NGBUMA1 is a highly efficient, fast switching FET tailored for high-power applications. It has a high breakdown voltage, low gate-source capacitance, low source-drain capacitance, and excellent thermal envelope and EMI performance. This makes it an excellent solution for switching and amplification applications in consumer electronics, industrial, automotive, and military applications that require high-performance and reliable operation.

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