IPD15N06S2L64ATMA2 Allicdata Electronics
Allicdata Part #:

IPD15N06S2L64ATMA2TR-ND

Manufacturer Part#:

IPD15N06S2L64ATMA2

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: N-CHANNEL_55/60V
More Detail: N-Channel 55V 19A (Tc) 47W (Tc) Surface Mount PG-T...
DataSheet: IPD15N06S2L64ATMA2 datasheetIPD15N06S2L64ATMA2 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.19109
Stock 2500Can Ship Immediately
$ 0.21
Specifications
Series: Automotive, AEC-Q101, OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V
FET Feature: --
Power Dissipation (Max): 47W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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Integrated power devices (IPDs) have become extremely important as the power electronics industry has matured. IPD15N06S2L64ATMA2 is a type of IPD specifically designed for power management applications. This article discusses the application field and working principle of IPD15N06S2L64ATMA2.

Generally speaking, IPD15N06S2L64ATMA2 is a power MOSFET chip designed with an N-channel Enhanced Mode process. It is designed to operate at an extremely low drain-source junction temperature of 125°C. This MOSFET has a low on-resistance of 15A and an operation frequency range of 5MHz–50MHz. It is a cost-effective and reliable choice for applications where dissipation and efficiency are of paramount importance.

IPD15N06S2L64ATMA2 is especially applicable to motor control and power management applications. Its ability to operate reliably even at high temperatures makes it a great choice for motor control applications. The chip is also ideal for switching power supplies, as its high current handling ability allows it to maintain a high efficiency even at high switching frequencies. Additionally, its low on-resistance makes it an effective choice for circuit protection applications as it can significantly reduce power losses.

The working principle of IPD15N06S2L64ATMA2 is similar to most MOSFETs. It consists of a substrate, two N-type source/drain regions and a gate oxide layer. The gate oxide layer acts as the insulator between the source/drain regions and the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field in the channel, which attracts electrons from the source to the drain, allowing current to flow. The current flowing in the channel reduces the control over the channel, allowing more current to flow as the voltage increases.

In summary, IPD15N06S2L64ATMA2 is a low-cost MOSFET chip designed for power management applications. Its low on-resistance, high current handling and temperature capability makes it well-suited for motor control and power management applications. The chip takes advantage of the same working principle as most MOSFETs. It utilizes an electric field in the channel to attract electrons from the source to the drain, thus allowing current to flow.

The specific data is subject to PDF, and the above content is for reference

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