Allicdata Part #: | IPD105N03LGATMA1TR-ND |
Manufacturer Part#: |
IPD105N03LGATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 35A TO252-3 |
More Detail: | N-Channel 30V 35A (Tc) 38W (Tc) Surface Mount PG-T... |
DataSheet: | IPD105N03LGATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IPD105N03LGATMA1 is a field-effect transistor (FET), specifically a metal–oxide–semiconductor FET (MOSFET). It is a three-terminal device, featuring a source terminal, a drain terminal, and a gate terminal. The control voltage applied to the gate terminal allows the transistor to act as an electrically operated switch, allowing or disallowing the flow of electrical current from the source terminal to the drain terminal.
FETs are advantageous for controlling the flow of electrical current because they can either be fully on or fully off, allowing for more precise control than a traditional bipolar junction transistor (BJT). This intense level of control is made possible by the depletion of carriers at the semiconductor where the FET logic gate is located, allowing for greater precision in controlling the flow of electrical current.
The IPD105N03LGATMA1 offers a number of advantages over other FETs and BJTs. It is a single-channel device, meaning it only has one gate terminal, unlike a dual-channel device which has two gate terminals. It also features a maximum drain current of 105A, allowing for more powerful operations than other FETs. Lastly, it features a maximum gate-source voltage of +20v, allowing for a wider range of possible control voltages than other models.
The IPD105N03LGATMA1 is commonly used in applications such as driving motors, powering lamps and LEDs, and controlling the flow of electrical current in digital circuits. It is especially popular for controlling the flow of electrical current in digital circuits due to its single-channel design and ability to be quickly switched between fully on and fully off. As it can control the flow of electrical current with precision, it is ideal for powering digital devices such as computers and cell phones.
The IPD105N03LGATMA1 is also used in robotics and other applications where precise motor control is required. The ability to quickly switch between fully on and fully off allows for the precise control of motors in terms of speed, torque, and direction. This makes it an ideal choice for controlling robotic arms and legs, as well as for controlling other precision mechanisms.
In conclusion, the IPD105N03LGATMA1 is a single-channel FET which is ideal for controlling the flow of electrical current. Its single channel design and maximum drain current of 105A make it the perfect choice for applications such as controlling the flow of electrical current in digital circuits and precise motor control in robotics and other mechanisms.
The specific data is subject to PDF, and the above content is for reference
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