IPD135N03LGATMA1

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The IPD135N03LGATMA1 is a single, N-Channel, low side driver with integrated power MOSFET for use in automotive, industrial and communications applications.

The IPD135N03LGATMA1 is designed around a 30mohm N-Channel power MOSFET that provides an ideal solution for switching and protection in high side or low side applications. The device includes an integrated integrating loop, allowing it to be used in both high side and low side applications. The integrated loop is tuned to provide fast over-current protection and minimize shoot-through.

The IPD135N03LGATMA1 features Dynamic Thermal Shutdown protection, eliminating the need for an external circuit for circuit breaker applications. The IPD135N03LGATMA1 also features adaptive voltage positioning (AVP), which eliminates the need for dynamic impedance matching for circuit protection and to achieve high efficiency. The low noise of the device is enabled by its design, as well as its integrated Miller Compensation.

The IPD135N03LGATMA1 is ideally suited for automotive, industrial, and communication applications. Its low gate charge and low gate voltage drop make it well suited for switched mode power converters and motor control applications, such as in both low side and high side drivers. The device is also well suited for industrial applications, such as in electronic starters and lighting ballasts, due to its rapid switching capabilities and protection features.

The IPD135N03LGATMA1 works by providing control of power transfer in both high side and low side applications with its integrated Miller Compensation. The Miller Compensation utilizes an adaptive voltage positioning (AVP) algorithm that adjusts the voltage at the device’s gate to optimize its performance. This ensures fast turn-on and turn-off, which is critical for high-efficiency switching applications. In addition, the integrated loop enables the device to provide fast over-current protection when the device is used in low side applications.

The IPD135N03LGATMA1 is also designed to provide protection against electrostatic discharge and temperature extremes. The device includes a temperature-sensing junction which will activate an internal thermal switch to protect the device in case of an over temperature event. It is also designed to withstand electrostatic discharge up to 2KV, meeting the stringent requirements for automotive and other industrial applications.

In summary, the IPD135N03LGATMA1 is a single, N-Channel, low side driver with integrated power MOSFET. Its low gate charge, low gate voltage drop, and integrated Miller Compensation enable it to be used in a variety of applications, such as in automotive, industrial, and communication systems. In addition, the device provides fast over-current protection and temperature monitoring, making it well suited for circuit protection in high side or low side applications.

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