IPD135N08N3GATMA1 Discrete Semiconductor Products

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The IPD135N08N3GATMA1 is a high-performance N-Channel MOSFET (metal–oxide–semiconductor field-effect transistor) that belongs to the portfolio of power MOSFETs from NXP Semiconductor. The device is designed as high-side switch in a low-side driver architecture, allowing the user to attain efficient and reliable control of the loads in a wide range of product applications.

The IPD135N08N3GATMA1 is housed in an advanced and compact HVSOF-3 package. It has a typical RDSon of 8 milliohms (RDS(on) representing the most significant figure of merit for MOSFET switches) and a maximum drain current density of 135 A/mm² (Idmax), making it suitable for power supplies, DC/DC converters or industrial motor drivers applications.

The MOSFET relies on a vertical structure rather than planar architecture to provide higher switching frequency performance, larger area for current conduction and reduced on-resistance compared to planar process. It features full ESD (electrostatic discharge) protection and excellent avalanche capability, providing high immunity to voltage transients.

In terms of logic level behavior, the MOSFET has a fast body diode and low threshold voltage (Vth less than 1.2 V) to ensure easy switching even when a low-voltage, low-current microcontroller (MCU) is used. It is designed to be protected against over-temperature and ESD events, including latch-up (Stray inductance up to 10 nH and delays up to 1 µs).

The application field of the IPD135N08N3GATMA1 MOSFET includes motor drives, dc/dc converters, voltage regulators, power supplies and high-performance clocks. It is typically used to drive high power loads such as motors, relays, heated elements and light sources.

When compared to an equivalent bipole MOSFET, the IPD135N08N3GATMA1 single MOSFET solution delivers improved power efficiency and a reduced size. The single transistor solution also allows a better protection against reverse operation or short circuit conditions of the load, and provides higher electrostatic discharge (ESD) robustness.

The working principle of the NXP IPD135N08N3GATMA1 MOSFET is as follows: The gate terminal of the transistor receives a signal voltage (VGS) from the MCU, which determines whether the transistor should be “on” or “off”. When the signal voltage applied to the gate is sufficiently high, a conductive channel is formed between the drain and the source, allowing current to pass from the drain to the source. As the NXP IPD135N08N3GATMA1 is an N-channel device, the threshold voltage needed to turn “on” the MOSFET is around 1.2V. If the signal voltage falls below the threshold voltage, the MOSFET will be “off” and no current will flow.

The IPD135N08N3GATMA1 MOSFET is a robust and efficient high-side switch solution, suitable for a wide range of industrial applications. It is designed to optimize performance and protect the system against over-temperature and ESD events, making it an ideal choice for demanding development projects in the professional audio, consumer electronics and motor drive applications.

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