IPD180N10N3GATMA1 Discrete Semiconductor Products

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IPD180N10N3GATMA1 is a N-Channel Enhancement Mode MOSFET, designed especially for low voltage, high speed switching and low RDS(on) applications. It is a high speed, switch-mode and low voltage MOSFET. It has been designed to use minimum energy while providing maximum performance and reliability.

Applications of IPD180N10N3GATMA1

The IPD180N10N3GATMA1 is most suitable for load switching and power-supply control applications where fast switching speed, low on-resistance, and the ability to control large currents with a minimum gate voltage are essential. It is ideal for portable electronic devices, such as notebook computers, PDAs, digital cameras, and telephones. Common applications include portable computer power management, battery chargers and power management circuits, DC/AC converters, home appliances, motor control, and light dimming and PWM control.

Working Principle of IPD180N10N3GATMA1

IPD180N10N3GATMA1 is a N-channel MOSFET, which works in enhancement mode. It is a metal oxide semiconductor field-effect transistor (MOSFET) that works by allowing electrons to pass through a thin electrically insulated gate that is opened and closed by an electrical voltage, and is used to switch an electrical circuit on and off. When the gate voltage is below the threshold voltage, the MOSFET is in its OFF mode. The gate voltage is typically negative. When the gate voltage increases, it reaches the threshold voltage and the MOSFET is in its ON state. This MOSFET can tolerate up to 10 V gate-to-source voltage and has a typical drain-to-source on-resistance of 0.017 Ω.

When the MOSFET is in the on state, the channel between the source and the drain is created. The electrons are allowed to pass through this channel and current flows between the source and the drain. The channel is controlled by the gate voltage; when the voltage is below the threshold voltage, the channel is turned off.

Using the IPD180N10N3GATMA1, the drain current can be switched on and off to control an electrical system. With a voltage applied to the gate terminal, the electrons are attracted to the gate and form a conducting channel between the source and drain. This creates a resistor between the source and drain and controls the current flow.

When the voltage of the gate is lowered, the electrons are repelled by the gate and the channel between the source and drain is no longer conducting. This shuts off the MOSFET and the current cannot flow through the MOSFET. By controlling the gate voltage, the current can be switched on and off to control an electrical system.

Advantages of IPD180N10N3GATMA1

The IPD180N10N3GATMA1 has many advantages:

• It has a low on-resistance, which helps reduce the energy consumption.
• It has a high breakdown voltage, which increases its reliability.
• It has a low threshold voltage, enabling it to switch at a low voltage.
• It has a fast switching speed, which helps reduce the power consumption.
• It is durable and can handle high power.
• It has a very small package, making it ideal for compact designs.

The IPD180N10N3GATMA1 is an ideal solution for applications that require a fast switching speed, low on-resistance, and the ability to control large currents with a minimum gate voltage.

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