IPD180N10N3GBTMA1

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The IPD180N10N3GBTMA1 is a type of field effect transistor that belongs to the enhancement-mode vertical N-channel MOSFET (metal-oxide semiconductor field effect transistor) family. It is mostly used for very high power switching applications and the IPD180N10N3GBTMA1 is typically found in smart meters, solid-state drives, DVRs, LED lighting, solar inverters, and in other power control circuits.

The IPD180N10N3GBTMA1 is capable of withstanding voltage of up to 180 Volt and a current rating of 10A. It also has a low gate threshold voltage rating, making it a suitable choice for controlling current flow in higher-power circuits.

Generally speaking, FETs and MOSFETs are three-terminal semiconductor devices that allow current flow between the source and drain terminals. They are sourced by VGS (gate to source voltage) which when further increased, increases the current flow between the drain and source.

Typically, the source terminal is connected to ground and the drain terminal is connected to the load in a circuit. The gate terminal is connected to two voltage sources, with one being VGS and the other being VDS (drain to source voltage).

When the VGS terminal is connected to a low voltage, the drain current (ID) will be low. This is referred to as the "off state," and the IPD180N10N3GBTMA1 is said to be "off."

When the VGS terminal is connected to a high voltage, the drain current will increase and the IPD180N10N3GBTMA1 is said to be "on." This is referred to as the "on state," and it allows current to flow through the device.

The IPD180N10N3GBTMA1 is not a linear device and it has a unique characteristic curve that shows how the drain current (ID) is affected by a change in VGS. In most cases, the ID will increase rapidly when the VGS is increased.

The IPD180N10N3GBTMA1 is manufactured with an exposed drain which helps to dissipate the heat generated by the device when in operation. It is also designed to handle high power and has a high breakdown voltage rating of 180 Volt.

Overall, the IPD180N10N3GBTMA1 is a high power MOSFET with a low gate threshold voltage ideal for controlling current flow in higher-power circuits. The device is also designed to handle high power and has a high breakdown voltage rating of 180 Volt. It can be used in a variety of applications including smart meters, DVRs, LED lighting, solar inverters, and other power control circuits.

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