IPI200N25N3GAKSA1

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The IPI200N25N3GAKSA1 is an N-channel power MOSFET transistor. It is a single-chip device that is designed to help improve circuit design for power management and signal switching applications. This specific device has been designed with a maximum drain-source breakdown voltage of 200V and a maximum continuous drain current of 25A. It is designed to have a low input and output capacitance, low gate charge and excellent on-state characteristics for reliable switching. The IPI200N25N3GAKSA1 is commonly used in high-power applications and has a wide range of applications including motor control circuits, power switching amplifiers, voltage regulators, and high-voltage power switches.

Application Field and Working Principle

The IPI200N25N3GAKSA1 is based on the power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure, the source, gate and drain are all symmetrical and the Gate is insulated by a thin layer of silicon dioxide (SiO2). This MOSFET is a type of FET, also known as Field Effect Transistor, and it is considered to be a current-driven device, meaning it can control larger amounts of current with fewer control signals than a voltage-controlled device. Essentially, this means that the IPI200N25N3GAKSA1 can be used to amplify or switch signals quickly, efficiently, and reliably.

The IPI200N25N3GAKSA1 is useful for applications that require high power in industrial, automotive, computer, and telecommunications fields. For example, it can be used as a high-power switch in motor control applications. It is also well-suited for use in automotive audio systems, AC-DC converters, DC-DC converters, telecom switching systems, and various power supplies.

The working principle of the IPI200N25N3GAKSA1 is simple. When a voltage or current is applied to the Gate terminal, electrons (the current carriers in a semiconductor) are drawn in, which changes the type and number of electrons in the channel between the Drain and Source terminals. This in turn changes how much current can flow in the channel, controlling the current between the Drain and Source terminals. Thus, the amount of current that can flow in the circuit is controlled by the voltage or current applied to the Gate. The greater the voltage or current applied, the more current will flow in the channel.

The IPI200N25N3GAKSA1 is designed to handle large amounts of power and is designed to have a maximum drain-source breakdown voltage of 200V. This means that it is capable of handling voltages up to 200V. It is also designed to have a low input and output capacitance, meaning it will be more efficient than other devices in the same category. Additionally, it has a low gate charge, meaning it will be able to switch quickly and be used in high-speed applications.

The IPI200N25N3GAKSA1 is a reliable, efficient and cost-effective switching device for circuit design in power management and signal switching applications. Its low input and output capacitance, excellent on-state characteristics, low gate charge and high breakdown voltage provide circuit designers with a high-performance solution for their power applications.

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