IPI25N06S3-25 Allicdata Electronics
Allicdata Part #:

IPI25N06S3-25IN-ND

Manufacturer Part#:

IPI25N06S3-25

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 25A TO-262
More Detail: N-Channel 55V 25A (Tc) 48W (Tc) Through Hole PG-TO...
DataSheet: IPI25N06S3-25 datasheetIPI25N06S3-25 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: OptiMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 25.1 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V
FET Feature: --
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Description

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The IPI25N06S3-25 is a power mosfet which belongs to the family of Single FETs and MOSFETs. As such, it is designed to provide protection from overworking and surges induced in the systems by the environmental or other factors. This current voltage converter has wide range of application from from robotics and automation to medical devices and military applications.This component has a 200V maximum drain-source voltage, a 25A drain current, a 200W drain-source power, an 800V gate-source breakdown voltage, a 47A gate-source leakage current, a -55°C to 150°C operating temperature and a 3V gate threshold voltage. It is a four-terminal device with a drain, source, gate and body. It is also used in switching power supply applications.

Working Principle

The MOSFET is completely turned off when the voltage of the gate is lower than the source voltage. In other words, when the gate and source are at the same voltage, the MOSFET is in its OFF state. When a voltage greater than the gate-source threshold voltage (Vgs-th) is applied to the gate, the device turns ON and allows the current through the drain-source path. This voltage control turns on and off the MOSFET like an electronic switch.

The IPI25N06S3-25 is usually operated in the so-called linear regime, where the MOSFET\'s power supply current is continuous and constant. In this regime, the voltage between the drain and source (Vds) and the operating frequency determines the current through the device (Id), while the voltage between the gate and source (Vgs) defines the signal amplitude. As such, the MOSFET is applied as a current-controlled device. Its transconductance (gm) is proportional to the signal amplitude and its current limit (Id) is determined by the Vds and frequency.

The MOSFET also works in saturation and cutoff mode. In the cutoff mode, the input and output signals are at the same voltage level and the device is completely turned off. The cutoff mode is used when the signal on the gate terminates and the device must be disconnected from the circuit or when the voltage difference between the gate and source is below the threshold voltage. The saturation mode is obtained when the gate-to-source voltage is greater than the threshold voltage. In this mode, the device is in its full on-state and allows for current to flow through the drain-source path.

The IPI25N06S3-25 is mainly used for switching applications, direct switching of low-voltage loads and DC-DC converters. It is designed to provide protection from overworking and surges induced by the environmental or other factors. The device can be also used in a multitude of other applications, such as robotics and automation, medical devices and military applications.

The specific data is subject to PDF, and the above content is for reference

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