Allicdata Part #: | IPI26CN10NG-ND |
Manufacturer Part#: |
IPI26CN10N G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 35A TO262-3 |
More Detail: | N-Channel 100V 35A (Tc) 71W (Tc) Through Hole PG-T... |
DataSheet: | IPI26CN10N G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 39µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2070pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IPI26CN10N G is a type of Insulated Gate BiPolar Transistor (IGBT). It works as an efficient switch for the purpose of controlling, amplifying, and directing electrical current flow for various applications. The name of the device stands for "Insulated-Gate Bipolar Transistor" and the \'G\'in the name stands for enhancement type channels. The device is used in any application from power supply circuitry and home appliances to car and airplane pollution control systems.
The active region of this device is a small "channel" that separates the two terminals of the device, the source and the drain. To control the on-off switching, an electric field is introduced across this "insulating" gate. The field causes current carriers to be either generated (enhanced) or removed (depleted). Depending on the application, either electron (n-channel), or hole (p-channel) current carriers are used.
The IPI26CN10N G acts like a switch, controlling the current flow between the source and the drain and can be switched on and off quickly. This makes the device ideal for connecting and disconnecting loads quickly and efficiently, thus providing efficient switching and protecting the device against over-current. The device also provides protection against thermal overloads and/or overvoltage conditions. The threshold voltage of the device also provides protection against reverse voltage under fault conditions.
In terms of the device’s working principle, when a voltage is applied to the gate of the device a strong electric field forms and controls the number of charge carriers in the active channel. In enhancement type devices, the electric field generates a depletion region between the source and the drain, due to which current carriers are generated. However, in depletion type devices, the depletion region reduces the number of current carriers in the active channel. Consequently, an increase in voltage across the gate increases the current flow, while a decrease in voltage reduces the current flow, allowing for efficient and accurate control of the current flow.
IPI26CN10N G is suitable for applications such as motor control, frequency control, switching power supplies, UPS systems, and various other power conversion systems. It is also used in other telecom, aviation, railway, and vehicle applications. Its primary characteristic is its low thermal resistance, allowing it to switch power at very high frequencies.
In conclusion, IPI26CN10N G is an efficient switching device designed to control, amplify, and direct electrical current in various applications. It provides high-level protection against thermal and overvoltage conditions, and its strong electric field allows for efficient and accurate control of the current flow. The device is suitable for a wide range of applications and its low thermal resistance allows it to switch power at very high frequencies.
The specific data is subject to PDF, and the above content is for reference
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