IPI25N06S3L-22

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The IPI25N06S3L-22 is a silicon n-channel enhancement MOS field-effect transistor (MOSFET). It is specially designed to have low on-state resistance (RDS(on)) with high efficiency and fast switching speed. With the integrated are packages, this power MOSFET can provide a low gate charge and high transconductance over a wide range of gate-source voltage. The IPI25N06S3L-22 also offers protection to safeguard the device from electrostatic discharge. It is suitable for a wide range of applications, such as audio power amplifiers, power-management applications (portable battery-powered applications, DC-to-DC converters, audio frequency amplifiers, and UPS applications).

The IPI25N06S3L-22 offers an operating junction temperature of up to 175°C and a drain current of up to 33 A. It has a drain-source voltage of 60V and a peak drain current of 120A. Furthermore, this device can operate at a drain-source resistance of 0.018 ohms, which is capable of providing low conductance losses in the circuit and higher efficiency. This power MOSFET has a low gate-source threshold voltage, which enables it to switch quickly, and it is optimized to have a low gate charge.

The working principle of an IPI25N06S3L-22 is based on metal–oxide–semiconductor (MOS) capacitance. MOS capacitance is formed by metal and an oxide layer separating a p-type substrate from an n-type metal. The oxide layer serves as an electrical insulator and the metal serves as a channel for electrons to flow. When a voltage is applied to the metal–oxide–semiconductor, it will cause electrons to flow through the metal channel and create a capacitance. This capacitance, in turn, will be used to control a current flow in the device.

The IPI25N06S3L-22 can be used in various applications ranging from linear regulator applications, discrete MOSFETs and gate drive circuits, to LED and power supply applications. This device can be used as a linear regulator to regulate the voltage of a system. It can also be used as a discrete MOSFET in switching circuits, as a gate drive circuit to provide gate drive signals to MOSFETs, and as a LED driver in lighting applications. It is also used in power supply applications where the high efficiency, low loss and low gate charge is beneficial.

The IPI25N06S3L-22 offers a great deal of flexibility and is applicable to a wide range of applications due to its low on-state resistance, fast switching speed, and low gate charge. Its low gate-source threshold voltage enables it to quickly switch on and off, and is also suitable for linear and discretes MOSFET applications. The drain-source voltage of 60V and the peak drain current of 120A make it suitable for high power applications. Its low RDS(on) and optimized gate charge, in turn, makes it suitable for power-management applications, audio frequency and power amplifier applications, power conversion applications, and UPS and portable battery-powered applications.

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