IPN60R1K0CEATMA1

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IPN60R1K0CEATMA1 Application Field and Working Principle

The IPN60R1K0CEATMA1 is a Ki-mosFET (enhancement-mode MOSFET transistor) designed for applications with high switching frequencies, such as automotive and industrial power systems. This device is a low on-resistance, avalanche rated MOSFET manufactured by International Rectifier (IR).

Field of Application

The IPN60R1K0CEATMA1 is an ideal choice for a variety of applications in the automotive, computing and industrial segment, due to its low on-resistance and fast switching time. It offers ultra-low RDS(ON) up to 400 mΩ and an Avalanche Energy Rating of up to 1.6 mJ. It is particularly suitable for Automotive power switch applications, DC/DC converters, high efficiency/high frequency PWM converters, as well as industrial applications, such as motor control, switch mode power supplies, active ORTING circuits and low frequency reversing motor control.

Working Principle

IPN60R1K0CEATMA1 MOSFET is designed to switch voltages without the need for mechanical contact. It works by controlling the flow of electrons through the substrate by changing the voltage applied to the gates of the device. When the voltage applied to the gates is higher than the threshold voltage, the device operates in enhancement mode, and electrons can flow from the drain to the source. When the voltage on the gates is lower than the threshold voltage, the device operates in depletion mode, and electrons are unable to flow from the drain to the source.

The device operates by allowing a very low static drain-to-source On-Resistance (RDSON) when the gate voltage is applied, allowing high efficiency of power conversion. It also offers fast switching performance, meaning it can achieve constant PWM duty cycles, resulting in high efficiency and lower heat losses.

Conclusion

The IPN60R1K0CEATMA1 MOSFET is a low-on-resistance, avalanche-rated MOSFET manufactured by International Rectifier. It is an ideal choice for automotive and industrial applications due to its low RDS(ON) and fast switching time. It offers ultra-low RDS(ON) up to 400 mΩ, an Avalanche Energy Rating of up to 1.6 mJ, and fast switching performance, which makes it suitable for a wide range of applications. It works by controlling the flow of electrons through the substrate by changing the voltage applied to the gates of the device.

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