IPN60R2K1CEATMA1

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The IPN60R2K1CEATMA1 is a high-performance, extended-voltage, depletion-mode, N-channel power MOSFET device in a TO-220AC/ISOISOPLUS-220 Power Package. It is designed for applications requiring high drain-source breakdown voltage, fast switching, and low-threshold drive. The device is made up of a vertical power MOSFET connected in series with an anode gate. This anode gate provides an additional voltage of 6V in order to extend the breakdown voltage of the drain-source channel up to 600V.

The IPN60R2K1CEATMA1 is suitable for use in a wide range of drain-source applications, including switching regulators, solenoids, relays and inverters. Its extended 6V breakdown voltage allows the device to switch loads at higher voltages than those of standard MOSFETs. Moreover, the device\'s low-threshold drive ensures the gate will operate more quickly. This helps the device to switch loads more accurately and with higher speed than other MOSFETs.

The IPN60R2K1CEATMA1 is also equipped with an integrated bias resistor, which helps maintain a steady gate-source voltage and therefore reduces the need for external bias current-limiting resistors. This is particularly useful for high-current, high power applications, where the external resistor would be relatively large and prone to overheating.

The IPN60R2K1CEATMA1 operates by utilizing the basic principle of a MOSFET, namely the voltage-controlled enhancement-mode transistor action. When a voltage is applied to the gate, it creates an electric field that attracts electrons away from the transistor\'s source and toward the drain, increasing the voltage between the source and drain, and thus creating an amplified signal. This amplified signal can then be used to control larger currents and voltages.

In summary, the IPN60R2K1CEATMA1 is a reliable and efficient N-channel MOSFET device that is ideal for applications requiring high drain-source breakdown voltage, low-threshold drive and fast switching. Its integrated bias resistor helps reduce the need for external components, making the device suitable for a variety of applications. The device can also be used to switch more complicated signals and higher voltages than those of regular MOSFETs.

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