IPN65R1K5CEATMA1

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The IPN65R1K5CEATMA1 is a P-channel enhancement mode Field-Effect Transistor (FET) designed for use in high frequency, low noise amplifier and switching applications. It provides voltage breakdown characteristics beyond +100V and can be used in many industrial applications where tight control of on-state resistance and low output capacitance is required for high efficiency and/or better gain control. This device also provides protection from high voltage conditions, which is an important feature for system level protection in harsh industrial environments.

The IPN65R1K5CEATMA1 utilizes a unique self-aligning gate geometry, which allows for an improved on-state conductivity, low gate capacitance, and improved noise immunity. The device also features a double polysilicon electrode for excellent gate control and reduced leakage current. The gate oxide layer thickness is designed specifically to minimize capacitance and gate-induced-drain-leakage (GIDL).

The IPN65R1K5CEATMA1 is designed to operate in high frequency switching applications. It has a low on-state resistance of 1.2 ohms and a high off-state breakdown voltage of >100V. The device is rated for an operating temperature range of -55°C to +150°C and an operating current range of up to 5.0A. In addition, the IPN65R1K5CEATMA1 has a low maximum gate capacitance of 10pF, which provides excellent switching performance in high frequency circuits.

The IPN65R1K5CEATMA1 is ideal for use in industrial applications such as power supplies, motor control, and server power management. The device can also be used to protect sensitive electronics from high voltage overshot conditions, such as SCR crowbar protection. The device can be used as a power switch, amplifier, oscillator, or a filtering device.

The working principle of the IPN65R1K5CEATMA1 is based on the FET, which utilizes field effect control of current flow. When voltage is applied to the gate of the device, an electric field is created, which serves to modulate or control the current flow through the device by changing the resistance of the channel. By controlling the current, either by switching or amplifying it, the device can be used for a variety of applications.

The IPN65R1K5CEATMA1 offers superior performance and reliability in industrial applications due to its unique design features. It features a low on-state resistance of 1.2 ohms and an operating current range of up to 5.0A, while providing a breakdown voltage of >100V. The device also provides excellent switching performance due to its low maximum gate capacitance of 10pF. Additionally, the device offers an operating temperature range of -55°C to +150°C and a long product life.

In conclusion, the IPN65R1K5CEATMA1 is an ideal solution for applications where high frequency, low noise, and higher efficiency and gain control are required. It is designed with a self-aligning gate geometry and a double polysilicon electrode, providing excellent on-state conductivity, low gate capacitance, reduced leakage current, and improved noise immunity. The device can be used to protect sensitive electronics from high voltage overshoot conditions, such as SCR crowbar protection, and for power distribution, motor control, and server power management. Additionally, the device offers superior performance and reliability due to its unique design features, including its low on-state resistance, high breakdown voltage, low maximum gate capacitance, and long product life.

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