IPN60R360P7SATMA1

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IPN60R360P7SATMA1 is a ultrahigh performance power MOSFET produced by Infineon. It has a breakdown voltage of 600V, an on-state drain current of 60A and an overall on-state resistance of 1.60mΩ. This product belongs to the Infineon OptiMOS™ 7 series, which is specifically designed for applications requiring very high efficiency, high switching speeds and improved thermal performance.

IPN60R360P7SATMA1 is a P-type MOSFET, which is suitable for use as a switch in power management, automotive, solar and wind power systems, and other high-performance applications. This device offers a high voltage and current rating, low RDS(on), fast switching, and low gate charge which makes it suitable for high frequency switching applications. The device also has a lower drain-source on-state resistance, allowing higher power dissipation and improved thermal performance.

Application fields

IPN60R360P7SATMA1 is suitable for applications where very high efficiency, high switching speeds and improved thermal performance are required. These include:

• Power Management
• Battery Management
• DC-DC Converters
• Automotive Power Systems
• Solar and Wind Power Systems

Working Principle

IPN60R360P7SATMA1 operates based on the principle of MOSFET operation. MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor, and is one of the most commonly used types of transistors. It works by controlling the current flow between the source and drain electrodes. When a gate voltage is applied to the gate electrode, the device will become ‘on’ and allow current to flow from its source to drain. When the gate voltage is removed, the device will become ‘off’ and no current will flow.

IPN60R360P7SATMA1 has a very low gate threshold voltage of -2V, which allows it to switch faster than other devices. It also has a low gate charge which translates to improved efficiency and reduced power dissipation. Additionally, it has a low on-state drain-source resistance, allowing for higher power dissipation with improved thermal performance.

Conclusion

IPN60R360P7SATMA1 is a ultrahigh performance single P-type MOSFET produced by Infineon. It is suitable for applications requiring very high efficiency, high switching speeds and improved thermal performance. It has a breakdown voltage of 600V, an on-state drain current of 60A and an overall on-state resistance of 1.60mΩ. It is specifically designed for applications requiring very high efficiency, high switching speeds and improved thermal performance.

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