IPU50R1K4CEBKMA1

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The IPU50R1K4CEBKMA1 is a single N-channel MOSFET that is widely used in an array of applications. It falls into the Transistors - FETs, MOSFETs - Single category, and it is seen as a staple in any electronics engineer’s toolbox due to its high specs and reliable performance. Let’s look further into the key application fields and working principle of this device.

Application Fields

The most common application for the IPU50R1K4CEBKMA1 is power transmission, as the device’s drain source voltage, VDSS, of 60V is sufficient for most medium voltage operations. It is capable of a maximum Drain Current of 57A, and consequently, is extremely capable of delivering high current flowing through it. This makes it a popular choice for use in high-power applications such as amplifiers, motor drivers, and other such power control circuits.

Additionally, due to the logic-level threshold voltage of 2.8V, the device is often found in several high-performance non-logic circuits and voltage converters. This makes this the device suitable for applications working with the power rails of circuits that lack the bias generated by a logic gate, as well as those that require some minimal degree of dynamic range.

Finally, the device can be used in reverse polarity scenarios, making it extremely useful for battery monitoring and motor speed control applications.

Working Principle

Fundamentally, the IPU50R1K4CEBKMA1 behaves in a manner similar to other N-Channel MOSFETs. Two regions, the source and the drain, are insulated by a P-doped substrate that is further separated by a gate embedded with electric charges. This voltage dependent gate controls the flow of electrons across the substrate, forming a field effect.

The gate voltage creates an electric field which opens and closes depending on the input. This field controls the flow of electrons between the source and the drain, and consequently, the current flowing through it. Depending on the drain source voltage, these switches can accept a positive and negative voltage polarity, but it must always remain lower than the devices maximum voltage.

It is clear that the drain-to-source breakdown voltage of 60 volts and the drain current rating of 57 amps makes the IPU50R1K4CEBKMA1 an extremely powerful switch. This remarkable capability is due to its N-channel design, which allows electrons to move through the device relatively quickly and has sufficient off-state current leakage, which makes it a great choice for power analog circuits.

In conclusion, the IPU50R1K4CEBKMA1 is a powerful and reliable single N-channel MOSFET that is used in a variety of applications such as power transmission, high-power amplifiers, motor drivers, voltage converters, and other similar non-logic circuits. Its high specs and logic-level threshold make it suitable for use in both logic and non-logic circuits as well, and its reverse polarity capability makes it indispensable for battery monitoring and motor speed control applications.

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