IPU50R3K0CEBKMA1

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IPU50R3K0CEBKMA1 is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a single channel and has a drain current of 80A. It is also known as n-channel penetration power transistor. It finds significant application in power switch circuits, power management, and power conversion systems. In terms of rating, it is available in two variations: 100V (Repetitive) and 150V (RMS). The device features low gate charge and low on-resistance which makes it an efficient power switch.

Application Field

IPU50R3K0CEBKMA1 is widely applicable for industrial systems, power supply converters, requirements of class D amplifier, solar power systems and replacement of bipolar transistors in various applications as switching power supply, and power management. Some of its applications are:

• Power switches in applications such as lighting, charging, etc.
• Switch mode power supply
• DC to DC converters
• Class D amplifiers
• Motor control electronics
• Clock generator circuits
• Solar panels

Working Principle

N-channel MOSFETs, and consequently the IPU50R3K0CEBKMA1 MOSFET, operate on the principle of modulating the electric field between source and drain. There is an insulated gate which controls the conduction of the source and the drain in a MOSFET. The insulated gate is activated by a voltage which can be adjusted externally, making it easier to adjust the field strength and to decipher the current flow and controlling it without initiating any thermal change. When a voltage is applied to the gate, an electric field is generated between the source and the drain, thus enabling the conduction of current. When this voltage is removed, the electric field between the source and the drain is lost and no current flows through the device.

The IPU50R3K0CEBKMA1 MOSFET has a relatively low gate threshold voltage of 4V, which makes it easier for controlling the power switch. The device also features fast switching capability with a maximum turn-off and turn-on time of about 50nsec.

One of the key features of IPU50R3K0CEBKMA1 is its low drain-source resistance, otherwise known as on-resistance. This device offers the lowest on-resistance of 130mΩ in comparison to other same sized MOSFETs, which makes it an attractive option for applications with high current requirements. Additionally, it can withstand high voltage levels with a drain-source breakdown voltage of 100V (Repetitive).

It is important to note that the device exhibits a high power dissipation, with a maximum power dissipation of 1600W. This signifies that the device should be securely mounted over a heat sink to dissipate the generated heat and should be installed in a well-ventilated environment.

Conclusion

In conclusion, IPU50R3K0CEBKMA1 is an efficient and low-cost MOSFET with a low gate threshold voltage and low on-resistance. It has a wide array of applications, including power switches, switch mode power supply, motor controllers and other power management devices. As it offers good thermal characteristics, it should be firmly mounted on a heat sink to ensure effective dissipation of generated heat.

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