IPU50R3K0CEAKMA1 Allicdata Electronics
Allicdata Part #:

IPU50R3K0CEAKMA1-ND

Manufacturer Part#:

IPU50R3K0CEAKMA1

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 1.7A TO-251
More Detail: N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG...
DataSheet: IPU50R3K0CEAKMA1 datasheetIPU50R3K0CEAKMA1 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.11380
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 26W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
Series: CoolMOS™ CE
Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IPU50R3K0CEAKMA1 is a single N-Channel depletion type MOSFET. This type of MOSFET can be used to control the flow and voltage of a current through a system. It is used in electrical and electronic circuits, as well as integrated circuits. This type of FET is mainly used in applications requiring high efficiency, and it provides firm control over the amount of current passing through the system. The IPU50R3K0CEAKMA1 has been designed to handle high current and high voltage, so it is able to provide a powerful and reliable system.

In order to understand how this transistor works, it is important to first understand the basics of MOSFETs. MOSFETs are field-effect transistors (FETs) which are used to control the flow of current through a system. They are also known as insulated-gate field-effect transistors (IGFETs). FETs are made up of a source and drain, with the channel between them being lightly doped with a semiconductor material such as silicon. A metal insulating layer (the gate) lies on top of the lightly doped channel and can control the flow of current across it. The IPU50R3K0CEAKMA1 is a single N-Channel FET; this means that the current flows through the drain and source when the gate is either open or closed.

The IPU50R3K0CEAKMA1 works on the principle of depletion mode operating, where the channel between the source and drain is “depleted” when the gate voltage is applied. This applies voltage to the channel which deactivates it and stops the flow of current. As the gate voltage decreases, the channel is “silicon-enriched” and allows for current to flow through. This type of MOSFET enables the user to adjust the flow of current, as well as how much voltage is flowing through the system.

The IPU50R3K0CEAKMA1 is mainly used in applications where high-voltage and high-current power management is needed. It is often used in motor control systems, motor drives and power supplies. It can be used in various automotive and industrial applications, including fuel injectors, starter motors, solenoids, air conditioners, and pumps. The IPU50R3K0CEAKMA1 is also suitable for use as a switch, so it can be used in various switching applications, such as in cell phone circuits.

The IPU50R3K0CEAKMA1 is a versatile and powerful semiconductor device and can be used in a variety of applications. It provides reliable power management with its ability to control the flow of current and voltage, making it an important component in numerous electrical and electronic applications.

The specific data is subject to PDF, and the above content is for reference

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