IPU50R950CEAKMA2 Allicdata Electronics
Allicdata Part #:

IPU50R950CEAKMA2-ND

Manufacturer Part#:

IPU50R950CEAKMA2

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 4.3A TO251
More Detail: N-Channel 500V 4.3A (Tc) 53W (Tc) Surface Mount PG...
DataSheet: IPU50R950CEAKMA2 datasheetIPU50R950CEAKMA2 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.15913
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 53W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Series: CoolMOS™ CE
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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IPU50R950CEAKMA2 is a high-voltage MOSFET transistor with ultra low On-Resistance. It is a 50V depletion MOSFET with very low RDS(on) and a breakdown voltage of 100V. The IPU50R950CEAKMA2 is ideal for use in applications where high power efficiency, low EMI and low noise are required. It is also suitable for use in switching power supplies, motor controllers, and other high power applications.

Application Field

IPU50R950CEAKMA2 transistors are suitable for PWM applications needing high speed, high efficiency and low switching loss. It can be used in AC/DC and DC/DC converters, and motor control circuits. Its low on-resistance makes it ideal for low voltage drop power applications. It is also suitable for high-side switching applications, such as hot swappable power sources. Its low input capacitance and high frequency capability makes it suitable for high-speed signals, where signal integrity and low power noise is important. Finally, IPU50R950CEAKMA2 transistors are also used in isolated current sensing applications such as isolated gate drive circuits.

Working Principle

The IPU50R950CEAKMA2 transistor is a depletion MOSFET with a P-channel enhancement structure. It consists of an N-type depletion channel and a P-type enhancement channel. When a positive voltage is applied to the gate, the depletion channel is inverted, allowing current to flow from source to drain. The P-type enhancement channel is also inverted, increasing the resistance of the channel and reducing the current that can flow through it. The gate voltage can be reduced to turn off the device, cutting off the current flow.

The device also has a very low on-resistance, meaning that the voltage drop across the device, and the amount of power it dissipates when conducting current, is very small. This makes it an ideal device for high power and high efficiency applications, where low power dissipation is a must. It also features low input capacitance and high frequency operation, making it suitable for high-speed signals.

The IPU50R950CEAKMA2 is a versatile MOSFET, suitable for a range of applications. Its low on-resistance, high voltage rating, and low input capacitance make it perfect for a variety of power and signal conditioning applications. It is also well-suited for high speed signal applications, where signal integrity is essential.

The specific data is subject to PDF, and the above content is for reference

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