IPW50R190CEFKSA1

Vgs(th) (Max) @ Id:	3.5V @ 510µA
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	127W (Tc)
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	1137pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	47.2nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	190 mOhm @ 6.2A, 13V
Drive Voltage (Max Rds On, Min Rds On):	13V
Current - Continuous Drain (Id) @ 25°C:	18.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IPW50R190CEFKSA1 FET is part of a range of advanced Silicon-based MOSFETs fromInfineon Technologies AG. This FET has distinctive features that set it apart from other FETs, making it an ideal choice for a variety of applications. In this article, we will discuss the application field and working principle of the IPW50R190CEFKSA1.The IPW50R190CEFKSA1 FET is a single N-channel enhancement mode MOSFET designed to offer fast switching and low on-resistance with low gate-charge. The device can switch loads up to200 A and can achieve blocking voltages up to 500 V. Its low on-resistance makes it ideal for applications such as high power DC converters, switch-mode power supplies, audio amplifiers, and motor control. It also has an advanced silicon process that results in low devices losses, and an ON-resistance accuracy of 2 %.The IPW50R190CEFKSA1 FET has gate-source insulation and zener diodes for reverse gate-gate-source protection. Additionally, it is capable of withstanding high peak inrush currents, making it ideal for applications that experience large inrush currents. The device also offers a wide range of channel charges for optimized switching performance.The working principle of the IPW50R190CEFKSA1 is based on the MOSFET. A MOSFET, or metal oxide semiconductor field effect transistor, is a type of transistor that uses two gates, or sources of voltage, to control the current flowing between the drain and the source. The gates are insulated from each other by a thin layer of oxide. The applied voltage to the gate controls the current flow between the drain and source, the voltage at which current starts to flow is known as the threshold voltage.When an electrical signal is applied to the gate, the oxide layer becomes more conductive, allowing the current to flow. By changing the voltage on the gate, the current flowing through the transistor is then able to be regulated. In the case of the IPW50R190CEFKSA1, the two gates are commonly known as a high-side and low-side switch. This allows the device to switch between different levels of current, making it an ideal choice for applications requiring variable current flows.In summary, the IPW50R190CEFKSA1 is a single N-channel enhancement mode MOSFET designed to offer fast switching and low on-resistance with low gate-charge. Its wide range of gate charges and peak inrush current protection makes it an ideal choice for applications such as high power DC converters, switch-mode power supplies, audio amplifiers, and motor control. The working principle of the IPW50R190CEFKSA1 is based on the MOSFET, in which an electrical signal is applied to the gate, changing the current flow between the drain and source.

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