
Allicdata Part #: | IPW50R280CEFKSA1-ND |
Manufacturer Part#: |
IPW50R280CEFKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 13A PG-TO247 |
More Detail: | N-Channel 500V 13A (Tc) 92W (Tc) Through Hole PG-T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 350µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 92W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 773pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32.6nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 4.2A, 13V |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IPW50R280CEFKSA1 is a type of Field Effect Transistor (FET) with single-channel design. It is a highly efficient transistor that can operate over a wide temperature range from -55 to 175 degrees Celsius. The IPW50R280CEFKSA1 is a P-channel device, which means its transistor action occurs when a P-type semiconductor is exposed to an electric source. The device is intuitively designed for easy use and communication with other components or circuits. It reduces the complexity of the assembly and simplifies the circuit structure.
The application field of the IPW50R280CEFKSA1 is quite broad. It has the capability to work in a range of applications such as voltage controlled resistors, embedded systems, automotive components, solar panel controllers and more. Its compatibility with analog circuits makes it an ideal choice for low power applications. It is also widely used in power supplies and motor controls.
The working principle of the IPW50R280CEFKSA1 involves the use of an electric field. When the electric field is applied, layers of charge are created on the surface of the semiconductor. The electric field then induces a voltage setting on the gate, which in turn affects the flow of current between the source and drain terminals. This is known as the "Gate Voltage-to-Drain Current" or GVD/I relation of the FET and it is what determines the overall performance of the device.
The electric field of the IPW50R280CEFKSA1 is created by a voltage applied to the gate which is proportional to the drain current. This voltage is typically between 0.8V and 10V VA depending on the application and it controls the current by creating field effect channels in the semiconductor. The field effect channels can be made to conduct or block the flow of current and this is what makes it such an important part of the overall operation. Another important factor is the temperature. The IPW50R280CEFKSA1 is highly temperature stable and is designed to maintain its performance even in extreme temperatures.
The IPW50R280CEFKSA1 has a variety of features that make it ideal for many applications. Its ease of use and low power requirements, its robust design and temperature stability make it a popular choice among professionals in a range of industries. Additionally, its compatibility with analog and digital circuits makes it a great choice for low power applications, and its wide usage means that it has become a versatile device for many different applications.
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