IPW50R199CPFKSA1

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The IPW50R199CPFKSA1 is a Single N-Channel Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is designed for power applications and specifically targeted at high-performance and economic requirements. The device is rated at 4500V, 50A and it is capable of operating at temperatures up to 175°C.

The key feature of a MOSFET is that it is voltage-operated, meaning that its gate-to-source voltage (V GS ) controls its drain-to-source current (I DS ). This makes it the ideal switch for high-power switching in many applications, from motor control to audio amplifiers and switching power supplies. It is also extremely efficient, with its off-state gate leakage current (I GSS ) typically lower than 1nA.

The IPW50R199CPFKSA1 is a power MOSFET that provides fast switching and easy device optimization. It also has a low gate charge compared to other MOSFETs, and this ensures that the device is optimized for maximum switching performance. The device is packaged in an industry-standard PQFN (Power Quad Flat No-lead) 5x5mm package, which enables excellent thermal performance, with a very low thermal resistance (R DS(ON) ).

The IPW50R199CPFKSA1 is ideal for power switch applications, such as AC-DC converters, DC-DC converters and motor drives. It can also be used in Automotive and Industrial applications, such as power control and safety systems. The device is also suitable for switching light loads, as it can handle peak currents of up to 50A.

The working principle of the IPW50R199CPFKSA1 is based on the charge-carrier mechanism. When the gate-to-source voltage (VGS) is below the threshold voltage (VTH), no current flows between the drain and the source and the MOSFET is turned off. However, when the gate-to-source voltage (VGS) is increased above the threshold voltage (VTH), the MOSFET is turned on and a channel of electrons is created between the source and the drain. This causes the current to flow between the source and the drain and the MOSFET is turned on.

The IPW50R199CPFKSA1 is an excellent choice for high-power switching and power control applications. Its fast switching time, low on-state resistance and low gate charge make it ideal for automotive and industrial applications. Its cost-effectiveness and high performance make it a great choice for any power control application.

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