IPW50R399CPFKSA1

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The IPW50R399CPFKSA1 is a power MOSFET that is found in many applications such as motor drives, power switching, and high-frequency switching. It is a single low-side power MOSFET that is optimized for low-loss switch applications.

This MOSFET offers excellent gate charge x allowing for fast switching and gate resistances for good heat dissipation. Another benefit of this device is that it features a low gate-source voltage rating of 4.5V and a high drain current rating of 18A at 100C junction temperature. The maximum drain source voltage for this device is 500V.

The IPW50R399CPFKSA1 has a low on-resistance that contributes to low total power consumption, effortless drive design and a large current capacity from a single switch. The MOSFET is also equipped with a large dielectric withstanding voltage and a low gate charge that allows for low power generation.

The working principle behind this power MOSFET is that it utilizes the properties of semiconductor materials to control a large amount of current with a small input signal. In other words, the MOSFET acts as a variable resistor that can be adjusted by applying a voltage to its gate terminal. When a voltage is applied to the gate, it will create an electric field that changes the resistance between the drain and source. This allows the device to act as a switch, allowing it to turn on and off depending on the voltage applied to the gate.

The IPW50R399CPFKSA1 is ideal for applications such as motor drives, power switching, mid-frequency switching, power amplification, and rectification. This device is also used in high voltage applications, such as power supplies, motor controllers and AC/DC motor controllers. It is a versatile device that can handle high current loads with minimal leakage.The specific data is subject to PDF, and the above content is for reference