IPZ60R040C7XKSA1

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The IPZ60R040C7XKSA1 is a high performance, elegant and commonly used single N-channel MOSFET designed by IR (International Rectifier). It is an advanced power management semiconductor that is capable of switching high currents and managing high voltages efficiently. It is produced using the latest state-of-the-art CMOS technology.

The device has an integral source-drain resistance (Rds) of 0.04 Ohm and a drain-source breakdown voltage (BVdss) of 60V. It has an excellent thermal stability, meaning that it can remain operational at temperatures as high as 175°C, while its maximum transient junction temperature (Tj) rating is 150°C. It can manage a maximum continuous drain current (Id) of 2.2A, a maximum pulsed drain current (Idm) of 8A, and a maximum gate-to-source voltage (Vgs) of 18V.

Its application fields are mainly related to electronic switching, power management, and power conversion, as well as switching applications that require high-current and/or high-voltage ratings, such as MCU-driven DC/DC converters, solar power inverters, motor drives, communication power and automated production lines. Its low ohmic source-drain resistance, high peak drain current, excellent temperature stability, and superior thermal performance make it an ideal device to switch and manage high voltages and currents.

The device is built using a process called thin-film MOSFET, which requires two separate manufacture steps: the first layer is made of polysilicon to form the gate connected to a polysilicon resistor and the second layer on top is the semiconductor silicon-dioxide. The polysilicon gate is overlaid with a thin film of silicon-dioxide insulation. The second layers provide a dielectric between the gate, drain and source and create the threshold voltage.

It works by forming an insulating film between gate and source, made from silicon-dioxide. When a voltage of 10-18 volts is applied to the gate, it causes the gate to accumulate negative charge underneath the insulation layer, depleting the channel of current carriers from the source to the drain. This reduces the resistance between drain and source and decreases the drain-source voltage, allowing current to flow. When the gate voltage is decreased to 0 volts, this effect is reversed, leading to the resumption of very high resistance between drain and source and thus stopping the flow of current.

The IPZ60R040C7XKSA1 has a variety of capabilities and features that recommend it for a wide range of applications. Its low ohmic source-drain resistance, high peak drain current, excellent temperature stability, and superior thermal performance makes it an ideal device to switch and manage high voltages and currents. It also has a low gate charge (Qg) of 4.3nC, a turn-on delay time (Ton) of 3ns, an off-state leakage current (Ioff) of 3mA, and a maximum junction temperature (Tj) of 150°C, making it an excellent choice for many applications.

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