![IPZ65R045C7XKSA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IPZ65R045C7XKSA1-ND |
Manufacturer Part#: |
IPZ65R045C7XKSA1 |
Price: | $ 9.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 46A TO247-4 |
More Detail: | N-Channel 650V 46A (Tc) 227W (Tc) Through Hole PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 8.47980 |
10 +: | $ 7.70994 |
240 +: | $ 6.55351 |
Vgs(th) (Max) @ Id: | 4V @ 1.25mA |
Package / Case: | TO-247-4 |
Supplier Device Package: | PG-TO247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 227W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4340pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
Series: | CoolMOS™ C7 |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 24.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPZ65R045C7XKSA1 is a single N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This type of transistor is essentially a switch that can be used in a wide variety of electronic circuits and applications. It is used to provide efficient and reliable control over power and voltage. The IPZ65R045C7XKSA1 is designed to operate in an environment where low impedance and high frequency are required.
The IPZ65R045C7XKSA1 is able to provide precise switching control and low resistance due to its high input impedance. It also has a fast switching speed and low capacitance, allowing for higher resolution and high-speed operation. Additionally, this MOSFET is able to provide ultra-low on-state resistance, making it ideal for applications that need to conserve energy. Its durability is also excellent thanks to its integrated ESD protection.
The IPZ65R045C7XKSA1 is a popular choice for power management. It has a high current rating of 45A and a low drain-source on-state resistance of 0.45Ω. This allows for efficient power switching with minimal losses. Additionally, it has a maximum voltage rating of 30V and a maximum continuous drain current of -30A. The maximum power dissipation of this device is 51W, making it a great choice for high-power applications.
The IPZ65R045C7XKSA1 is a single N-Channel MOSFET and is used for load switching, power management, and signal switching. It can be used in a wide range of applications including lighting, electrical equipment, automotive, and consumer electronics. For example, it can be used to switch high current loads, regulate voltage, or provide high-speed switching for signal processing.
The working principle of the IPZ65R045C7XKSA1 is fairly simple: by using a gate voltage, the resistance between the drain and source terminals can be controlled. When the gate voltage is low, the device is said to be in a “cut-off” state, meaning it has zero current flowing between the two terminals. When the gate voltage is raised, a conducting channel is formed and current can flow between the drain and source terminals. This is referred to as a “saturation” state.
The IPZ65R045C7XKSA1 is an excellent choice for a range of applications. Its features make for superior power and voltage control, as well as low on-state resistance for efficient energy conservation. Additionally, its fast switching time makes it ideal for signal applications. With its high current and voltage ratings, it is also suitable for powering loads in consumer and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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