IPZ60R099P6FKSA1

Vgs(th) (Max) @ Id:	4.5V @ 1.21mA
Package / Case:	TO-247-4
Supplier Device Package:	PG-TO247-4
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	278W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3330pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	CoolMOS™ P6
Rds On (Max) @ Id, Vgs:	99 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	37.9A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction
IPZ60R099P6FKSA1 is a type of field effect transistor (FET). FETs are semiconductor devices made up of three layers of a substance called a semiconductor. The first layer is called the substrate, the second layer is the gate, and the third layer is the source and drain. FETs have three important characteristics which distinguish them from other types of transistors. They are has high input resistance, a lower input capacitance than other transistors, and are easier to switch from on to off.Application Field
IPZ60R099P6FKSA1 can be used for a variety of applications, including power management applications in the automotive and industrial sectors. It is particularly suitable for switching power supplies, such as those used in DC-DC converters, as it provides high efficiency, low power dissipation, and fast switching speeds. It can also be used for signal processing, analog and digital circuit design, High Frequency (HF) and Very High Frequency (VHF) amplifiers, as well as motor control applications.Working Principle
FETs have three main parts: the gate, the source, and the drain. The gate is a highly conductive part of the device that is connected to the controlling voltage. The source and drain are the parts of the device that control the flow of current through the channel between them. When a voltage is applied to the gate, the electric field generated in the channel between the source and drain creates a field effect and increases the channel current. This field effect is what allows a FET to behave as a switch and is known as the “floating gate effect”. The source and drain are connected with a current source, and the amount of current that flows is determined by the voltage applied to the gate. Pros and Cons of IPZ60R099P6FKSA1
The primary advantage of IPZ60R099P6FKSA1 is its low input capacitance, which makes it ideal for power management applications. It also has exceptionally low power dissipation, making it an excellent choice for applications which require high efficiency and low power consumption. Additionally, it has a relatively high input resistance, which helps to reduce crosstalk in signal processing applications. However, there are some drawbacks to using IPZ60R099P6FKSA1, such as its limited operating voltage range and its inability to handle higher voltages. Additionally, the device has a relatively high power rating, meaning that it can become very hot when operating at high voltages. Finally, the device has a relatively short lifetime, so designers need to be aware of this when selecting a transistor for their application. Conclusion
IPZ60R099P6FKSA1 is a type of field effect transistor which is suitable for a variety of applications, including power management, signal processing, and motor control applications. Its key advantage is its low input capacitance, which makes it ideal for power management applications. Additionally, it has a relatively high input resistance, which helps to reduce crosstalk in signal processing applications. However, it has a few drawbacks including its limited operating voltage range, its inability to handle higher voltages, and its relatively short lifetime.

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