IPZ60R070P6FKSA1 Allicdata Electronics
Allicdata Part #:

IPZ60R070P6FKSA1-ND

Manufacturer Part#:

IPZ60R070P6FKSA1

Price: $ 4.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V TO247-4
More Detail: N-Channel 600V 53.5A (Tc) 391W (Tc) Through Hole P...
DataSheet: IPZ60R070P6FKSA1 datasheetIPZ60R070P6FKSA1 Datasheet/PDF
Quantity: 1000
240 +: $ 4.11776
Stock 1000Can Ship Immediately
$ 4.58
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 391W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPZ60R070P6FKSA1 is a type of MOSFET, otherwise known as a Metal Oxide Semiconductor Field Effect Transistor. It is a single-channel type, meaning it has only one input and one output. The MOSFET is commonly used in applications such as power conversion, motor control, and driving of high voltage and high current loads. The device is designed to handle high voltage levels and dissipate heat efficiently. This makes it perfect for applications where high reliability is required.

MOSFETs are design for wide range of voltage and current levels, and can be used in both analog and digital applications. They are usually classified according to their application specification, as either a depletion-mode device or an enhancement-mode device. The IPZ60R070P6FKSA1 is an enhancement-mode device, meaning it is normally off and can be turned on with an applied voltage.

A key benefit of MOSFETs is their low power consumption in comparison to other types of transistors. This is thanks to the layout of the device, which utilizes a metal oxide layer between the drain and source. The metal oxide layer allows voltage to ride on the surface of the channel, reducing leakage and allowing for lower power consumption. The channel provides a pass-through current when a certain voltage (Vgs) is applied in the gate.

The IPZ60R070P6FKSA1 is an ideal choice for powering high-efficiency loads, such as LED lighting. In addition, it can handle large transient spikes due to its high peak current capability and fast response times. This makes it an excellent choice for switching supplies and other power conversion applications.

The working principle of a MOSFET is fairly simple. It is essentially a three-terminal device consisting of a gate, a source, and a drain. The gate is essentially a gate voltage, and the source and drain act like two plates of a capacitor. When a certain voltage is applied to the gate, it creates a depletion region near the source and a barrier region near the drain. As current flows through the MOSFET in the source to the drain, the resistance between them varies depending on the applied gate voltage. This change in resistance creates an amplification effect, allowing the MOSFET to be used as an amplifier.

In summary, the IPZ60R070P6FKSA1 is an excellent choice for high-efficiency and high-power-handling applications, such as power conversion and motor control. Its fast switching characteristics and low power consumption make it a great choice for applications where reliability and efficiency are paramount. It is an enhancement-mode device with a simple working principle, and is ideal for LED lighting and switching supplies.

The specific data is subject to PDF, and the above content is for reference

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