Allicdata Part #: | IR11682STRPBFTR-ND |
Manufacturer Part#: |
IR11682STRPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC SECONDARY SIDE CTRLR 8SOIC |
More Detail: | Power Supply Controller Secondary-Side Controller,... |
DataSheet: | IR11682STRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | SmartRectifier™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Applications: | Secondary-Side Controller, Synchronous Rectifier |
Voltage - Input: | -- |
Voltage - Supply: | 8.6 V ~ 18 V |
Current - Supply: | 48mA |
Operating Temperature: | -25°C ~ 125°C |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | IR11682SPBF |
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IR11682STRPBF is an integrated full-bridge gate driver controller with a high-side shunt amplifier designed to drive N-channel MOSFETs. This IC is a high-performance device with a wide power supply range that can operate at frequencies of up to 1 MHz. This device is suitable for a variety of high power applications including solar inverters, industrial power converters, and other motor control systems.
IR11682STRPBF is commonly classified as a Power Management IC (PMIC). This type of IC is used for a variety of power supply, monitoring, and control tasks. Generally speaking, PMICs are used to regulate the power supply, monitor the system parameters, and protect the system from overvoltage and overcurrent faults.
Application Field of IR11682STRPBF
The IR11682STRPBF is a high-performance full-bridge gate driver IC designed for driving N-channel MOSFETs at frequencies of up to 1 MHz. The device is ideal for high power applications such as solar inverters, industrial power converters, and other motor control systems. The device is also suitable for used in a variety of other applications, such as switched mode power supplies, lighting systems, automotive systems, and any other applications requiring a high performance gate driver.
Working Principle
The working principle of the IR11682STRPBF is fairly simple. The chip consists of a high-side driver and a low-side driver, both of which are connected to the output gate of the N-channel MOSFET. The drivers are controlled by a Fast Pulsed Low Side (FPLS) logic, which controls the gate drive signals based on the logic level at the input pins of the device.
The FPLS logic allows the gate signal to be modulated in order to reduce switching losses, reduce EMI and improve power efficiency. Ultimately, the output of the device is a low-impedance signal which can be used to drive the gates of N-channel MOSFETs to conduct current in the desired direction.
Protection Features
The IR11682STRPBF has several built-in protection features which are designed to protect the device from damage induced by overvoltage, overcurrent, and power anomalies. The chip has a built-in overvoltage protection (OVP) that can guard against an input voltage that is 10% higher than the rated operating voltage. Likewise, the device also has an overcurrent protection (OCP) feature which is designed to detect when the device is subjected to an excessive load current.
Additionally, the device has several additional protection features including short-to-ground protection, short-circuit protection, and thermal shutdown. All of these protection features are designed to protect the device from damage in the event of an unexpected power anomaly.
Conclusion
In conclusion, the IR11682STRPBF is a high-performance bridge driver IC designed to drive N-channel MOSFETs at frequencies of up to 1 MHz. This device is suitable for a variety of high power applications such as solar inverters, industrial power converters, and other motor control systems. The chip is classified as a Power Management IC (PMIC), and is equipped with a variety of protection features to keep the device safe from overvoltage and overcurrent faults. The working principle of the device is based on a Fast Pulsed Low Side (FPLS) logic, which allows the gate signal to be modulated in order to reduce switching losses, EMI, and improve power efficiency.
The specific data is subject to PDF, and the above content is for reference
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