IR1175STR

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IR1175STR is a power management IC (PMIC) - Gate Drivers device, and it is commonly used for driving the gate of external field effect transistors (FETs). This IC designed to control and protect voltage power supply systems. This IC utilizes the integrated driver and sense FETs, providing a precise, high-frequency drive with zero crossover. It is optimized for pulse-width-modulated (PWM) converters, implementing multi-phase voltage regulation or current regulation.

The IR1175STR features a single-stage gate drive circuit with gate current regulation, gate-and-source overvoltage protection, overcurrent and over-temperature protection. This circuit also provides ESD and surge suppression. The IR1175STR is capable of driving N-channel and P-channel MOSFETs, as it is compatible with a wide range of gate drive voltage levels. The IC is pin compatible with IR1175STRL, but has higher gate voltage capability. It incorporates an integrated charge pump driver, to provide the required gate drive voltage.

IR1175STR is suitable for offline, continuous and constant current applications. Some of its potential applications include DC-DC synchronous buck converters, power factor correction, inrush current limit control, single and multi-phase modular power supplies, interleaved converters, insulated DC-DC converters, AC-DC conversion and AC motor controls.

The IR1175STR allows designers to extend the device’s capability, with the use of an additional sense FET and driver, increase the series configuration and support PVP Input Voltage up to 600V. The IC comes in an SO-8 package and operates over the junction temperature range of -40°C to +150°C.

The working principle of IR1175STR can be divided into two parts,for driving the gate of the external FETs and providing overvoltage, overcurrent, and overtemperature protection.

Firstly, IR1175STR uses the charge pump to provide the required gate drive of the external MOSFETs. The charge pump is the bridge between the driver and the gate for enhanced performance. The charge pump produces a higher gate drive voltage than the input voltage, providing better performance. The charge pump gate voltage is accurately trimmed to ensure proper gate voltage level.

Secondly, the IC incorporates an integrated driver and sense FETs, to provide high frequency drive with zero crossover. The sense FETs provide protection against overvoltage and overcurrent conditions, while the driver FETs ensures that the gate is driven by a constant current pulse. The IC also features gate-and-source overvoltage protection, overcurrent and over-temperature protection.

The IR1175STR is a versatile IC, ideal for a wide range of applications. It features a high speed driver and sense FETs, as well as gate-and-source overvoltage protection, overcurrent and over-temperature protection. The IC is designed to drive both N-channel and P-channel MOSFETs, and it is suitable for offline, continuous and constant current applications. The IC is easy to use and provides robust performance for the most demanding applications.

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