IR1175

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IR1175 is a high voltage integrated gate driver for applications like SiC and GaN. It is an integrated power transistor driver that controls power transistors, using the half bridge configuration, which is commonly used for DC to DC converter and motor driver applications, such as in power reflex control, induction cookers and high power switch mode power supplies. The IR1175 is a high efficiency, high-performance driver that simplifies switch mode power supply (SMPS) design and is suitable for use in applications that require high voltage, high frequency, and low on-resistance of the MOSFET.

IR1175 is a GaN/SiC high-voltage integrated gate driver (HVIGD) that is designed for applications requiring low on-resistance, high-current, and high-speed operation. The IR1175 integrates four components into one package: a high-voltage start-up circuit, high-voltage level shifters, 2 high-side drivers, 1 low-side driver, and the associated low-voltage power management. The IR1175 is designed to provide a high peak drive current to control a wide variety of discrete power MOSFETs. The device is housed in a 4mm x 4mm TDFN lidded package, which allows the IR1175 to be used in tightly packed space constraints.

The IR1175 is also designed to protect against short and open gate conditions, allowing it to be used in harsh environment. The IR1175 has an integrated high-voltage start-up circuit that allows the device to be driven by a low-voltage DC source. The start-up circuit is configured to drive a high voltage to the upper and lower gate drivers, thus enabling the device to operate in an open drain configuration. In this configuration, the gate voltage will be clamped to a maximum of VDD + VGS, where VGS is the gate-source voltage of the power MOSFET.

The IR1175 gate drivers are controlled by two digital enable signals that drive two high-side and one low-side gate driver, respectively. The high-side gate drivers are level shifted, such that the gate voltage is not limited to the logic level of Vdd. The high-side gate drivers incorporate a Schottky diode clamped circuit, allowing them to be operated quickly, while preventing current flowing in reverse direction. The low-side Gate Driver is designed to be the low-side synchronous rectifier, allowing fast conduction of current in one direction while blocking the current in another.

The IR1175 integrates a comprehensive low voltage power management (LVP) block. This block is responsible for controlling the power to the high voltage gate drivers and protects the device from over-voltage, over-current and ESD conditions. The LVP block manages the power supply voltage, controls the gate current, interface with the enable signals, protects against ESD and provides thermal protection. The LVP block is configured to power the low side gate driver in a separate IC package, allowing for simplified layout and better thermal performance.

The IR1175 is an ideal solution for applications such as DC-DC converters, motor drives, inverters, and high power switch mode power supplies (SMPS). It provides a high peak drive current, low-voltage start-up circuit, and integrated ESD protection for high voltage devices making it ideal for high power applications. The integration of the low voltage power management and the GaN/SiC HVIGD makes the IR1175 the ideal choice for applications requiring low on-resistance and high-current, high-frequency switching.

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