IR1167BSPBF

Logic Voltage - VIL, VIH:	2V, 2.15V
Base Part Number:	IR1167BSPBF
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-25°C ~ 125°C (TJ)
Rise / Fall Time (Typ):	18ns, 10ns
Input Type:	Non-Inverting
Current - Peak Output (Source, Sink):	2A, 7A
Series:	SmartRectifier™
Voltage - Supply:	12 V ~ 18 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	1
Channel Type:	Single
Driven Configuration:	Low-Side
Part Status:	Obsolete
Packaging:	Tube

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IR1167BSPBF is a high-performance gate driver chip, developed by IR (International Rectifier) and designed with a standard power package. It is a high-performance, low-power, small-scale, low-cost integrated circuit device that is used in various fields of power management. This article will discuss the application field and working principle of the IR1167BSPBF.Application Field of IR1167BSPBFThe IR1167BSPBF is mainly used for transistor gate driving requirements. It is commonly used in brushless motor controllers in the motor drive and control industry, and it can also be used in the DC (direct current) electrical and electronic device industries. This power device has been developed to meet the demands of a wide variety of applications, such as lighting, appliances, robotics, and industrial applications.In addition, the IR1167BSPBF can be used in the production of the high- integrity, low-RC relay outputs, such as automatically controlled power systems, AC (alternating current) and DC control loops, motor control, H-bridge motor control, sensorless brushless DC motor control, and other power conversion applications.Working Principle of IR1167BSPBFThe IR1167BSPBF utilizes an integrated half-bridge gate driver circuit with two independent output channel high-side and low-side high-side driver outputs. It is equipped with a high side and low side logic level shifter, power MOSFET driver and a logic output interface, which together enable the device to provide an advanced high-performance gate-driving solution.The IR1167BSPBF is designed with a low-voltage logic enable control, which allows the device to meet the low-voltage requirements of various design applications. This device also features low-current operational capability, which provides a cost-effective solution for low-cost applications.The IR1167BSPBF is designed to drive MOSFET (metal oxide semiconductor field effect transistors) and IGBT (insulated gate bipolar transistors) power enhancement circuits. Its output buffer provides a high-level output resistance, which helps in providing quick switching between the high side and low side drivers. The device also features high-side active pull-down protection, which helps protect the circuit from potential damage caused by a shorted high side driver.The IR1167BSPBF is capable of driving a wide variety of logic signal levels, including Complementary MOS (CMOS), TTL (transistor-transistor logic) and Advanced High-Speed CMOS (AHSC). The device has a wide supply voltage range, which allows for flexible power supply design and compatibility with various communication interface speeds.ConclusionThe IR1167BSPBF is a high-performance gate driver chip developed by IR and designed with a standard power package. It is used in various fields of power management and is suitable for driving various logic signal levels. This power device is designed to drive MOSFET and IGBT power enhancement circuits and it features high-level output resistance and low-current operational capability. In addition, it has a wide supply voltage range and provides quick switching between the high side and low side drivers.

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