IR2114SSTRPBF Allicdata Electronics
Allicdata Part #:

IR2114SSTRPBF-ND

Manufacturer Part#:

IR2114SSTRPBF

Price: $ 2.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DVR HALF BRIDGE 600V 24-SSOP
More Detail: Half-Bridge Gate Driver IC Non-Inverting 24-SSOP
DataSheet: IR2114SSTRPBF datasheetIR2114SSTRPBF Datasheet/PDF
Quantity: 1000
2000 +: $ 2.32637
Stock 1000Can Ship Immediately
$ 2.56
Specifications
Current - Peak Output (Source, Sink): 2A, 3A
Base Part Number: IR2114SSPBF
Supplier Device Package: 24-SSOP
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 24ns, 7ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 2V
Voltage - Supply: 11.5 V ~ 20 V
Gate Type: IGBT
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IR2114SSTRPBF is a low side, high and low side, non-inverting driver from Infineon Technologies. The device is an efficient gate driver for N and P channel power MOSFETs which can be used in applications that require low-level gate driving.

Application Field

IR2114SSTRPBF gate driver is typically used for driving both high and low side MOSFETs in synchronous rectifiers of switch-mode power supplies (SMPS) such as AC/DC converters, DC/DC converters, offline converters, and high-voltage switched power converters. It also finds applications in motor drives, light dimmer, battery charger, switching-regulators and loudspeaker protection.

Working Principle

IR2114SSTRPBF gate driver consists of a power MOSFET driver and a single-shot pulse circuit. It also consists of two independent driver outputs; one for the high side and one for the low side. The device features a 4.1V to 18V wide operating voltage range. The pulse function ensures that the output voltage can reach a level which is close to zero during turn-off. This enables faster switching performance. The device has a high crossover current due to its low-impedance outputs and can drive MOSFETs of up to 150mA. The device also has a wide range of adjustable dead times.

IR2114SSTRPBF features an open emitter positive output configuration. Its non-inverting output driver is supplied with VDD supply and connected to a high-side MOSFET source through a pull-down resistor. Its low-side driver is low-side sink and connected with a P channel source through a pull-up resistor. The single-shot pulse circuit of the IC is connected to the output driver in order to generate blinking pulses which can be adjusted by the dead-time setting. It also supports both integration-mode and floating-mode applications. The device also has an over-voltage crowbar detection circuit which prevents voltage spikes from occurring.

IR2114SSTRPBF also has a common-mode noise immunity, thermal shutdown circuitry and a UVLO (Under Voltage Lock Out) feature. The thermal shutdown feature shuts down the IC when its temperature reaches the critical value, while the UVLO will restore the IC\'s normal operation when the supply voltage is resumed. The device is available in an SOT227-3L package with an enhanced PPT protection which helps protect against ESD, latch-up and over-temperature current, making it highly reliable and robust.

All these features, along with the device\'s wide operating voltage range and increased efficiency, make IR2114SSTRPBF an important component in any power conversion system. It is suitable for both industrial and automotive applications and is widely used in power MOSFET gate drive circuit designs.

The specific data is subject to PDF, and the above content is for reference

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