IR2106SPBF

Current - Peak Output (Source, Sink):	200mA, 350mA
Base Part Number:	IR2106SPBF
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	150ns, 50ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.9V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tube

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Introduction

PMIC (Power Management Integrated Circuit) gate drivers are widely used in power management applications. For example, in today\'s world of high frequency electronics, the IR2106SPBF gate driver is often used to control the magnitude and frequency of high power switching applications. The IR2106SPBF also supports current limiting and fault protection features, making it an ideal choice for drive circuits with high reliability requirements. In this article, we will look into the application field and working principles of the IR2106SPBF Gate Driver.

Application Field of the IR2106SPBF Gate Driver

The IR2106SPBF gate driver is an advanced, high power MOSFET and IGBT driver designed for both high and low-side switch configurations. It can provide up to 500mA peak current for MOSFET and IGBT gate driving. It is suitable for driving high power MOSFETs and IGBTs in applications such as motor control, AC/DC power converters, RF and high frequency switching circuits. It is especially suitable for applications where high precision current control and high isolation are required, such as SMPS and battery management configurations. The IR2106SPBF supports a wide input voltage range, from 2.5V to 15V, with very low output voltage drop. It is capable of driving both N-channel and P-channel MOSFETs and IGBTs. It has two low side gate drivers and one high side gate driver. The low side gate drivers provide high frequency and pulse density modulation, while the high side gate driver takes care of the over-voltage protection and fault protection.The IR2106SPBF also includes two current sensing outputs, which can be used to sense the current flow across the MOSFET or IGBT. These current sensing outputs are adjustable, allowing the user to set the current flow according to the desired level. The IR2106SPBF supports under-voltage sensing and shut down, making it suitable for use in applications that require power-up sequencing. In addition, it is designed to be immune to transients and noisy environments, making it suitable for use in harsh environments.

Working Principle of the IR2106SPBF Gate Driver

The IR2106SPBF gate driver follows a very simple working principle, relying on a controller to drive the gates of MOSFETs or IGBTs at a predefined voltage level. The controller senses the input voltage and drives the MOSFET or IGBT gates accordingly. When the input voltage is above the predefined level (the ‘low’ threshold), the controller drives the low side gate drivers. This activates the low side MOSFETs or IGBTs and sends power to the load. When the input voltage drops below the predefined level (the ‘high’ threshold), the controller drives the high side gate drivers. This deactivates the high side MOSFETs or IGBTs and removes power from the load.The current sense outputs are adjustable and can be used to limit the current flowing through the MOSFET or IGBT. This can help reduce switching losses and improve the overall efficiency of the system. Additionally, the IR2106SPBF supports under-voltage sensing, making it suitable for use in power-up sequencing applications.

Conclusion

The IR2106SPBF gate driver is a high power MOSFET and IGBT driver designed for both high and low-side switch configurations. It is suitable for applications where high precision current control and high isolation are required, such as SMPS and battery management configurations. It is capable of driving MOSFETs or IGBTs at a predefined voltage level and supports under-voltage sensing and shut down, making it suitable for power-up sequencing applications. It also includes adjustable current sensing outputs and is immune to transients and noisy environments.

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