IR2130JTR Integrated Circuits (ICs)

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The IR2130JTR is a monolithic high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. It is designed to enhance MOSFET and IGBT performance, improve performance, and reduce EMI in motor control applications and other power switching applications.

The high and low side drivers of the IR2130JTR are equal with both transistors having same output. This feature eliminates the need to re-design the PCB when changing from high-side to low-side switches; instead, both switch control signals can be directly connected to the chip. This feature also eliminates the need to compensate for differences between high and low side drivers.

In addition, the chip provides a programmable dead time (2, 4, 6 ns) and internal frequency compensation. The propagation delay time is low (30 ns max) and the output current is limited to ± 1 A. In order to extend the life of the external power MOSFET, the IR2130JTR features an integrated gate-drive current protection circuitry. The gate-drive current for small external MOSFETs is limited to a few hundred milliamps. This feature provides an additional level of safety for the external power MOSFETs.

The IR2130JTR is designed for use in motor control applications and other power switching applications. It is ideally suited for applications like motor drives, active-clamp forward converters, and H-bridge topologies. The chip can provide up to 3 A peak and 1.5 A RMS of gate drive current to the external MOSFETs, and it can work with high side voltages up to 600 V and low side voltages up to 300 V.

The working principle of the IR2130JTR is based on two high voltage, high speed, power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. The high and low side drivers of the IR2130JTR are equal with both transistors having same output. In order to extend the life of the external power MOSFET, the chip features an integrated gate-drive current protection circuitry. The gate-drive current for small external MOSFETs is limited to a few hundred milliamps.

The chip is designed to control the flow of current from the power supply to the motor, the gate drive signals are applied to the power switches to turn them on or off. When the high side transistor is turned on, the drain-source voltage drop is directly transferred to the gate, creating a positive voltage. When the low side transistor is turned on, the voltage drop is transferred to the gate, resulting in a negative voltage. Then, the two signals are summed, resulting in a high-voltage differential voltage to drive the MOSFETs.

In addition, the chip has integrated overcurrent protection and initial current peak limiters. These are effective in preventing dangerous shorts and enabling safe and reliable operation of the system. The chip also offers protection against ground fault (VGS) and overvoltage (VDS) conditions. It also has a programmable dead time (2, 4, 6 ns) and internal frequency compensation.

In conclusion, the IR2130JTR is a highly efficient and reliable integrated gate driver for MOSFET and IGBT applications. It features high side and low side referenced output channels to control the flow of current from the power supply to the motor. It also features an integrated gate-drive current protection circuitry to extend the life of the external power MOSFETs. The chip provides a programmable dead time (2, 4, 6 ns), internal frequency compensation, and overcurrent protection and initial current peak limiters to protect the system against ground fault and overvoltage.

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