IR2109SPBF

Current - Peak Output (Source, Sink):	200mA, 350mA
Base Part Number:	IR2109SPBF
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	150ns, 50ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.9V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tube

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Introduction

A gate driver is an integrated circuit (IC) used to drive the gate of a power MOSFET or an IGBT. The IR2109SPBF is a dual MOSFET driver specifically designed to operate in high-speed and high-current applications, such as automotive and industrial motor control. This device is capable of driving two N-channel MOSFETs in an isolated configuration with a single power supply.

Applications

The IR2109SPBF has many applications including motor control in the automotive, consumer electronics, and industrial applications. In the automotive sector, the device can be used in electric power steering and braking systems. In consumer electronics, IR2109SPBF can be used in solar panel inverters and LED drivers. The device can also be used in industrial applications such as robotics, 3D printing, and CNC machines.

Features

The IR2109SPBF offers a number of features that make it suitable for high-speed and high-current applications. It supports both low-side and high-side gate drive configurations and has an adjustable under-voltage lockout (UVLO). It also comes with a ±100V fault protection that can safely drive logic into a high-side MOSFET under short circuit conditions, as well as an output short circuit protection.

Working Principle

The IR2109SPBF is an optically isolated, dual MOSFET driver that uses a high-efficiency gate drive circuit to operate two N-channel MOSFETs. It is powered from a single supply and operates over a wide supply range of 4.5V to 42V. Its operating principle is simple. When an input high signal is applied to its logic input, the device will drive an output high signal which switches the MOSFET on. When the input signal is low, the driver will drive the output low signal, switching the MOSFET off. The device is protected against output short-circuits, and its UVLO function can be configured to an adjustable threshold.

Conclusion

The IR2109SPBF is a dual MOSFET driver designed to drive two N-channel MOSFETs in an isolated configuration from a single power supply. It is suitable for use in high-speed and high-current applications in the automotive, consumer electronics, and industrial sectors. It has a wide operating range and is protected against output short circuits and undervoltage lockouts. The device utilizes a high-efficiency gate drive circuit to turn MOSFETs off and on, making it ideal for motor control applications.

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