IR2131SPBF Allicdata Electronics
Allicdata Part #:

IR2131SPBF-ND

Manufacturer Part#:

IR2131SPBF

Price: $ 5.54
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DRIVER BRIDGE 3-PHASE 28-SOIC
More Detail: Half-Bridge Gate Driver IC Inverting 28-SOIC
DataSheet: IR2131SPBF datasheetIR2131SPBF Datasheet/PDF
Quantity: 2135
1 +: $ 5.54400
10 +: $ 5.37768
100 +: $ 5.26680
1000 +: $ 5.15592
10000 +: $ 4.98960
Stock 2135Can Ship Immediately
$ 5.54
Specifications
Current - Peak Output (Source, Sink): 250mA, 500mA
Base Part Number: IR2131SPBF
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 80ns, 40ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tube 
Description

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IR2131SPBF is an advanced gate driver product developed by International Rectifier Company (IR), a global leader in advanced power management technology. This product has the ability to drive both power MOSFETs and IGBTs, making it suitable for a wide range of power management applications. The product has been designed to allow maximum system flexibility in terms of device compatibility and input voltage range, while ensuring optimal performance and reliability.

Application Field and Working Principle

IR2131SPBF can be used for a variety of power management applications such as in motor control, industrial automation, power conversion, renewables and storage, home appliances and consumer electronics. The product provides high-speed performance that is suitable for applications that require high-efficiency operation and maximum system flexibility.

IR2131SPBF works through an integrated two-stage driver architecture that makes it capable of driving both power MOSFETs and IGBTs. The first stage consists of a high-speed, low-impedance complementary bipolar driver, which can operate up to 650V. This stage can provide high peak current drive capabilities of up to 3A. The second stage is a low-side driver that is optimized for low feedback current. This stage can provide up to 1A peak current drive and is capable of operating up to 400V.

The product also features an adjustable dead time and built-in over-temperature protection. This ensures that the device can be operated safely and reliably in power applications. In addition, the built-in isolation interface allows IR2131SPBF to be integrated into a variety of system architectures with minimal design effort.

The product also includes integrated control and protection functions that enable efficient operation for a wide range of power management applications. This includes under-voltage and over-voltage detection, overtemperature protection, adjustable dead time, and EMC protection. This ensures that the product can be used safely and reliably in a wide range of power management applications.

IR2131SPBF can be used in a variety of power management applications and provides high-speed performance with excellent reliability and versatility. Its integrated two-stage driver architecture makes it suitable for use in applications that require maximum system flexibility and optimal performance. The adjustable dead time and integrated protection functions ensure that the product can be operated safely and reliably in a variety of power management applications.

The specific data is subject to PDF, and the above content is for reference

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