IR2151

Current - Peak Output (Source, Sink):	125mA, 250mA
Base Part Number:	IR2151
Supplier Device Package:	8-DIP
Package / Case:	8-DIP (0.300", 7.62mm)
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	80ns, 40ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	RC Input Circuit
Series:	--
Logic Voltage - VIL, VIH:	--
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tube

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<p>The IR2151 is an IC (Integrated Circuit) developed by Infineon that serves as a sophisticated gate driver in the world of Power Management ICs (PMICs). It is a popular device among those involved in industrial, automotive, and consumer applications, as well as those in the aerospace industry. This device is an essential component in the efficient power management and control of devices, especially when used with Field Effect Transistor (FET) devices. With its wide range of characteristics, the IR2151 has now become the go-to gate driver for many power management applications.</p><p>The IR2151 works by providing high/low driving voltage levels to the gates of FETs. This allows for efficient control and processing of the energy transfer from the supplying source to the load. The driving voltage levels can be varied depending on the requirements of the application. The IR2151 has a wide range of features that make it one of the most versatile gate drivers. For example, an adjustable PWM (Pulse Width Modulation) modulation circuit embedded in its functionality enables it to provide a higher level of control on the field effect transistors.</p><p>The IR2151 has a built-in DC-to-DC converter that provides the capability to generate either high gate voltages or low gate voltages. This converter offers a current gain between the output and input of the IR2151, allowing the device to drive long (12 V–24 V) or short (1.5 V–7 V) FET gate voltage levels. Additionally, the converter has an embedded control loop, allowing it to calculate thes gate drive voltage of the FETs accurately, thereby improving the efficiency of power transmission.</p><p>Aside from the above, the IR2151 has a built-in slew rate feature that prevents the FETs from overshooting their gate voltage when the load is changed. This helps ensure the FETs will switch at the required speed. The slew rate can be adjusted from 0 ns to 9 ns per cycle depending on the needs of the application. Additionally, the device’s over-temperature protection feature prevents it from shutting down unexpectedly due to overheating.</p><p>The IR2151 has an outstanding power-on reset time of 40 ns and protection circuitry such as fast over-current protection, under-voltage lockout, short circuit protection, and thermal shutdown, making it a reliable, high-performance gate driver. The device is offered in several packages that fit into limited spaces, such as SOIC-8, LLP-8, and LPCC-8 packages. Additionally, the IR2151 can be used in conduit-network applications, allowing users to leverage the already present infrastructure in the process and making cost savings.</p><p>For power management applications in the industrial, automotive, consumer and aerospace industries, the IR2151 is the gate driver of choice due to its wide range of features, such as adjustable driving voltage, embedded PWM modulation, DC-to-DC converter, adjustable slew rate, over-temperature protection, and short circuit protection. The IR2151 also comes in several convenient packages, as well as with an impressive power-on reset time, making it an ideal gate driver choice to quickly and efficiently take care of any power control needs.</p>

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