IR2127STR

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PMIC - Gate Drivers encompasses a range of power electronic devices that are implemented in a wide variety of applications. IR2127STR is one such gate driver, which includes all the necessary features for efficient operation, such as programmable slew rate and over-current protection. In this article, we will take a closer look at the application field of IR2127STR and its underlying working principle.

IR2127STR Application Field

As mentioned earlier, power electronic devices, such as IR2127STR, are applied in various applications. IR2127STR can be used in industrial motor drives, residential motor control systems, automotive power systems, consumer electronics, and more. IR2127STR is a highly efficient and robust gate driver, making it suitable for high power applications. It is designed to work with up to 100V supply voltage, making it well suited for applications that require high voltage boost.

In terms of performance, IR2127STR is capable of operating at high speeds, delivering up to 400kHz of fast transition time. It is also capable of minimizing current losses due to its integrated low-side MOSFET drive circuit, making it well suited for applications that require power efficiency. Furthermore, IR2127STR features built-in programmable over-current protection, allowing it to safely and efficiently operate in applications with potentially high fault currents.

IR2127STR Working Principle

The working principle of IR2127STR is quite simple. It is an integrated power electronic device featuring two high-current output channels, each capable of controlling both the high-side and low-side switching devices in half-bridge topology. When the input signal voltage is applied, IR2127STR gate driver conducts current to the output stage, which switches the high-side and low-side switches of the half bridge. This supplies adequate gate voltage to the switching MOSFETs to turn them on and off appropriately.

In addition to controlling the high-side and low-side switching devices, IR2127STR also features an internal slew rate control feature, which allows for quick turnaround in the transitions of the MOSFETs. This feature helps reduce switching losses and time delays, thus resulting in faster and more efficient performance. Finally, IR2127STR also features programmable over-current protection. This ensures that the device can safely operate in applications that require high fault currents.

Conclusion

In summary, IR2127STR is a highly efficient and reliable integrated power electronic device. It is designed to control both high-side and low-side MOSFETs in half-bridge topology and is used in a variety of applications, such as industrial motor drives, residential motor control systems, automotive power systems, and consumer electronics. It features built-in programmable over-current protection, fast transition time, low-side MOSFET drive circuit, and slew rate control features. Therefore, IR2127STR is an ideal choice for applications that require high power efficiency, high fault current handling capability, and fast turnaround in transitions.

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