IRG4PC30U Allicdata Electronics
Allicdata Part #:

IRG4PC30U-ND

Manufacturer Part#:

IRG4PC30U

Price: $ 2.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 23A 100W TO247AC
More Detail: IGBT 600V 23A 100W Through Hole TO-247AC
DataSheet: IRG4PC30U datasheetIRG4PC30U Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
175 +: $ 1.84460
Stock 1000Can Ship Immediately
$ 2.03
Specifications
Power - Max: 100W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C: 17ns/78ns
Gate Charge: 50nC
Input Type: Standard
Switching Energy: 160µJ (on), 200µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Current - Collector Pulsed (Icm): 92A
Current - Collector (Ic) (Max): 23A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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IRG4PC30U is part of a series of devices from International Rectifier (IR) consisting of Insulated Gate Bipolar Transistors (IGBTs). This specific IGBT makes use of the IR’s fourth generation generation Series IGBT technology which has been developed for improved switching and dv/dt characteristics. This makes it ideal for converters and inverters used in industrial applications.

The IRG4PC30UPbF device offers a voltage rating of 600 V with a total package current rating of 30 A. It is also available in several versions with different current ratings to suit the specifications of various applications. The device offers various features such as a low on-state resistance to reduce conduction loss and an ultra-fast (non-saturating) IGBT turn-on and turn-off times to reduce switching losses.

In addition to its superior electrical performance, the IRG4PC30UPbF is also very versatile and efficient. It is capable of handling high speed operations at high temperatures without suffering from degradation. It is also designed to be highly reliable and has a long lifetime.

The working principle of the IRG4PC30U device is based on the use of an insulated gate to control the conduction of an electric current through a bipolar transistor (BJT). This process of controlling current is referred to as “gate commutation”. The insulated gate for the IRG4PC30U is created by applying a negative voltage to the gate terminal which turns off the bipolar transistor. The transistor is then turned on again by applying a positive voltage to the gate terminal.

The gate commutation enables the device to switch quickly between on and off states, making it suitable for applications such as converters, inverters and motor controllers. This is because its fast turn-on and turn-off times reduce switching losses and its low conduction resistance helps to reduce conduction losses. Additionally, the device offers very low noise generation levels due to its reduced EMI (electromagnetic interference) spectrum.

The IRG4PC30UPbF can be used in a wide range of industrial applications, including switches, rectifiers, motor controllers and solar inverters. Furthermore, it can also be used in other applications such as Uninterruptible Power Supplies, renewable energy sources and consumer electronics.

In conclusion, the IRG4PC30UPbF is a high-performance IGBT which offers fast switching and dv/dt characteristics in addition to superior performance at high-temperature. Its low on-state resistance helps to reduce conduction losses, making it suitable for many applications. Furthermore, its advanced gate commutation and low EMI enable it to operate efficiently and reliably, making it an ideal choice for many industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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