IRG4BC30KDPBF Allicdata Electronics
Allicdata Part #:

IRG4BC30KDPBF-ND

Manufacturer Part#:

IRG4BC30KDPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 28A 100W TO220AB
More Detail: IGBT 600V 28A 100W Through Hole TO-220AB
DataSheet: IRG4BC30KDPBF datasheetIRG4BC30KDPBF Datasheet/PDF
Quantity: 70
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 70Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 600µJ (on), 580µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 60ns/160ns
Test Condition: 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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The IRG4BC30KDPBF is a 600 volt, gate-trench isolated, N-Channel IGBT based FET which is specifically designed for motor control applications. It has a high current capability and low Rdson for excellent efficiency and power management in applications such as motor drives, appliance control and lighting ballast.

This specific IGBT is part of a portfolio of FETs made with a gate-trench isolation technology which reduces switching losses and improves efficiency and turn-on times while operating at temperatures up to 150°C.

IRG4BC30KDPBF can be described to be an electronic switch which operates with two distinct types of operation: as an insulated-gate bipolar transistor (IGBT) or as an electrode-gate field-effect transistor (MOSFET). It is made up of two transistors (NPN and PNP) on a single monolithic substrate.

The device, due to it’s high speed, has the ability to switch in the 2-4nsec range, making it ideal for very high speed switching applications, especially motor controls and power electronics or any circuit that calls for fast switching from different states.

The IRG4BC30KDPBF uses a novel trench isolation technology to reduce conduction losses and improve efficiency. This advanced technology helps reduce switching losses and improves turn-on times in applications that rely on speed as well as reliability.

The IGBT\'s control input switches selectively a silicon controlled rectifier (SCR) onto its load. When this rectifier gets gated ON, its load current can only be controlled with the IGBT\'s power dissipating device. This device is turned OFF to preserve the load current, which further reduces the power losses of the switch.

In terms of application fields, the IGBTs of the IRG4BC30KDPBF family find their use in many sectors associated with power devices and control applications. Those include automotive applications such as electronic engine and powertrain control as well as appliance and lighting ballast control. Devices like these are also used in motor drives and power management related systems.

The IRG4BC30KDPBF can also be used in power-conversion systems and motor-drive circuits due to its ability to switch 2-4nsec range and withstand high temperatures up to 150°C.

What also makes IRG4BC30KDPBF stand out is its ability to operate in either IGBT or MOSFET mode, which makes it ideal for applications requiring both fast switching on/off and long on-times, as well as allowing switching between the two different modes.

Overall, the IRG4BC30KDPBF is an advanced and efficient IGBT that has excellent power management and fast switching. It is an ideal device for various uses ranging from power management to motor drive applications due to its impressive temperature stability and speed of switching.

The specific data is subject to PDF, and the above content is for reference

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