IRG4BC20FDPBF Allicdata Electronics
Allicdata Part #:

IRG4BC20FDPBF-ND

Manufacturer Part#:

IRG4BC20FDPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 16A 60W TO220AB
More Detail: IGBT 600V 16A 60W Through Hole TO-220AB
DataSheet: IRG4BC20FDPBF datasheetIRG4BC20FDPBF Datasheet/PDF
Quantity: 446
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 446Can Ship Immediately
Specifications
Power - Max: 60W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 37ns
Test Condition: 480V, 9A, 50 Ohm, 15V
Td (on/off) @ 25°C: 43ns/240ns
Gate Charge: 27nC
Input Type: Standard
Switching Energy: 250µJ (on), 640µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Current - Collector Pulsed (Icm): 64A
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction

Part of the growing family of IGBTs, the IRG4BC20FDPBF is a type of insulated gate bipolar transistor (IGBT) that offers a neat balance of low losses and excellent switching performance. As a result of its superior performance capabilities, this type of IGBT ideally suits applications, such as motor controls, renewable energy, inverters, as well as, industrial and consumer products. In this article, we will be looking into the IRG4BC20FDPBF application field and working principle.

Application

The IRG4BC20FDPBF is mainly used in applications that require a high-performance device that can offer low losses, high speed, and excellent switching capabilities. Its typical applications include motor control, renewable energy, inverters, and consumer products. In motor control, this IGBT can help to reduce the size of systems, reduce power loss, and provide improved control. Additionally, this type of IGBT is ideal for consumer products, especially those which require high-frequency switching. Furthermore, due to its low losses, the IRG4BC20FDPBF can help to improve system efficiency in applications such as renewable energy and inverters.

Working Principle

The insulated gate bipolar transistor (IGBT) is one of the main components used in modern electronics. It is a wide-band-gap power semiconductor device that offers superior performance characteristics, such as low losses and fast switching capabilities. These properties make it ideal for use in applications that require high-performance switching and low-power losses. The basic structure of an IGBT is composed of a pair of vertical layers of silicon body, a vertical N-type layer, and a vertical P-type layer. The N-type layer includes a gate region and the P-type layer contains a drain region. When a positive voltage is applied to the drain region, current flows through the channel and the IGBT is turned “on”. When the voltage is reversed, the IGBT is turned “off”.

Conclusion

The IRG4BC20FDPBF is one of the most advanced insulated gate bipolar transistors available today. It is ideal for applications that require high performance and low losses, such as motor control, renewable energy, and consumer products. Its superior performance capabilities are due to its high switching speed, low losses, and the ability to tolerate high temperatures. Additionally, its unique structure and working principle help to ensure that it has excellent switching capabilities and high reliability. In conclusion, the IRG4BC20FDPBF is an ideal choice for a range of different applications.

The specific data is subject to PDF, and the above content is for reference

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