IRG4BC20KDPBF

Power - Max:	60W
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	37ns
Test Condition:	480V, 9A, 50 Ohm, 15V
Td (on/off) @ 25°C:	54ns/180ns
Gate Charge:	34nC
Input Type:	Standard
Switching Energy:	340µJ (on), 300µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 9A
Current - Collector Pulsed (Icm):	32A
Current - Collector (Ic) (Max):	16A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The International Rectifier IGBC20KDPBF is a device that is used in many applications. The device is a single insulated-gate field-effect transistor (IGGTFET) that is built using high-quality silicon carbide (SiC). The device is preferred in many applications because of its low on-state resistance, high-frequency operation, and its ability to switch high voltages. In this article, we will discuss the applications and working principles of the IRG4BC20KDPBF.

Applications

The IRG4BC20KDPBF can be used in a variety of applications, ranging from power conversion, energy storage and distribution, to drive systems. For example, it can be used in a motor drive system, where it can be used to control the voltage and current that flows to the motor. It can also be used in a power converter, where it can regulate the output power to the motor and provide a smooth power supply. Additionally, it can be used in a battery management system where it can protect the batteries from over-charging.The device is also used as a fast-switching switch as part of a power distribution system. It can be used to switch large currents, provide electrical isolation and provide galvanic protection. Furthermore, the device is used in semiconductor power supplies, inverters and switch-mode power supplies. As such, it can be used to switch both AC and DC signals with high-power efficiency.

Working Principles

The IRG4BC20KDPBF is a Field-Effect Transistor (FET) that is made up of a semiconductor layer designed to be “on” when the gate is energized. The gate is connected to the source and the drain, and when the gate is activated, a voltage is applied to the gate and causes the device to construct a conductive pathway between the source and the drain. This type of FET is a voltage-controlled device, as the amount of gate current (IG) controls the amount of drain current (ID). As such, the device can be used for many applications, such as amplifying signals or switching currents on or off. It is also capable of operating at higher frequencies than other types of FETs, so it can be used for high-frequency switching applications.

Conclusion

The IRG4BC20KDPBF is a single insulated-gate field-effect transistor (IGGTFET) that is used in a variety of applications. It can be used in motor drives, power converters, battery management systems and power distribution systems. The device is voltage-controlled, as the amount of gate current (IG) controls the amount of drain current (ID). Furthermore, it is capable of operating at higher frequencies than other types of FETs and can be used for high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description