IRG4PC40U Allicdata Electronics
Allicdata Part #:

IRG4PC40U-ND

Manufacturer Part#:

IRG4PC40U

Price: $ 3.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 40A 160W TO247AC
More Detail: IGBT 600V 40A 160W Through Hole TO-247AC
DataSheet: IRG4PC40U datasheetIRG4PC40U Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: $ 3.12000
10 +: $ 3.02640
100 +: $ 2.96400
1000 +: $ 2.90160
10000 +: $ 2.80800
Stock 1000Can Ship Immediately
$ 3.12
Specifications
Power - Max: 160W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: 34ns/110ns
Gate Charge: 100nC
Input Type: Standard
Switching Energy: 320µJ (on), 350µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Current - Collector Pulsed (Icm): 160A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IRG4PC40U is a single IGBT with a conduction current of up to 40 amperes and an operating voltage of up to 600 volts. It is designed for use in applications requiring high power density, such as high power switching power designs, motor control systems, and motor drive designs. The IGBT is a four-layer device, with a PN junction gate and an N-channel field effect transistor (FET) structure. The gate is insulated from the collector, and is used to control the flow of current through the device.

The IRG4PC40U is made up of a P-type and N-type layer of silicon dioxide, which are sandwiched by four layers of zinc oxide thin-film material. This thin-film material, combined with the four layers of silicon dioxide provides an excellent electrical insulation layer to protect the device from short circuits and overcurrents. The top layers of zinc oxide also provide a high degree of temperature stability, reducing the diode’s chances of suffering from temperature-induced gate dielectric leakage.

The device works by using a voltage between the gate and the emitter to control the flow of current through the device. When the gate voltage is lower than the emitter voltage, the device is off and no current flows. When the gate voltage rises above the emitter voltage, the device turns on and current flows. The current flow is proportional to the voltage difference between the gate and the emitter.

The IRG4PC40U offers several advantages over other types of power control devices, such as thyristors. It has very low on-state resistance, allowing for higher switching speeds and higher power efficiency. It also has higher current carrying capacity and very low gate drive power requirements. The device is also designed for operation over wide temperature ranges, making it suitable for use in applications requiring industrial-level operation.

The IRG4PC40U is commonly used in applications such as motor control, DC-DC converters, UPS systems, motor drives, and power factor correction circuits. It is also used to control the switching of high-current loads, such as those required for LED lighting and LED display systems. In addition, the device is used in medical equipment and other applications requiring high power density. Due to its reliability and high current carrying capacity, the device is also suitable for use in harsh industrial environments.

The specific data is subject to PDF, and the above content is for reference

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