IRG4PH50KDPBF

Series:	--
Packaging:	Bulk
Lead Free Status / RoHS Status:	--
Part Status:	Not For New Designs
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	45A
Current - Collector Pulsed (Icm):	90A
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 24A
Power - Max:	200W
Switching Energy:	3.83mJ (on), 1.9mJ (off)
Input Type:	Standard
Gate Charge:	180nC
Td (on/off) @ 25°C:	87ns/140ns
Test Condition:	800V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr):	90ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC

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Introduction

The IRG4PH50KDPBF is an insulated gate bipolar transistor (IGBT). This transistor is a type of power semiconductor device, which combines characteristics and performance of both the MOSFET and BJT in one package. In comparison to other power switching devices, IGBTs have a number of unique features that make them particularly suitable for a variety of power electronics applications.

IGBT Application Field

IGBTs offer benefits of both BJTs and MOSFETs in a single device. In addition to their high switching speed, IGBTs provide excellent current density, low output capacitance and low теhnicаl noise. This makes IGBTs well suited for high-frequency operations, such as inverters and converters. In the field of motor control, IGBTs offer reliable and efficient power regulation that is suitable for brushless DC motor drives, high speed switches, and induction motor drives. IGBTs are also widely used in servo driver designs, owing to their low теhnicаl switching losses.In solar inverters, IGBTs are used to convert the direct current produced by the solar cells into alternating current. As solar inverters require very high efficiency, IGBTs are an ideal choice as they can switch rapidly, minimize power losses, and generate less heat. The use of IGBTs is also expanding into medical scanners, x-ray systems, industrial lasers, and high powered ovens and stoves. As these systems require precise and reliable power control, IGBTs are becoming the preferred power switch.

IGBT Working Principle

IGBTs are composed of two components, the level MOSFET and the bipolar transistor. The level MOSFET forms the gate which is controlled with a DC signal. This DC signal is then used to control the voltage of the bipolar section, which is connected in parallel. The IGBT operates in three normal states, which are off, on, and short. In the off state, the level MOSFET is in its non-conductive state and the bipolar transistor is in its cutoff state, allowing no current to flow. In the on state, the level MOSFET is activated and the bipolar transistor is in its active state, allowing current to flow. In the short state, both the level MOSFET and the bipolar transistor are both activated, allowing current to flow without any control.

Conclusion

The IRG4PH50KDPBF is an insulated gate bipolar transistor (IGBT) that is well suited for a variety of power electronics applications. It is designed to offer the advantages of both BJTs and MOSFETs in one package, which makes it suitable for high-frequency operations, motor control, solar inverter systems and other applications which require precise and reliable power control. The IGBT works by using a level MOSFET to control the voltage of the bipolar transistor, which are both connected in parallel and can operate in three normal states: off, on and short.

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