IRG4BC30FDPBF

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Not For New Designs
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	31A
Current - Collector Pulsed (Icm):	124A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 17A
Power - Max:	100W
Switching Energy:	630µJ (on), 1.39mJ (off)
Input Type:	Standard
Gate Charge:	51nC
Td (on/off) @ 25°C:	42ns/230ns
Test Condition:	480V, 17A, 23 Ohm, 15V
Reverse Recovery Time (trr):	42ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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< p >< b > Introduction < /b > < /p >The IRG4BC30FDPBF is a single IGBT device from the family of transistors. It is widely used in a variety of applications due to its features such as low-voltage drive requirements for gate turn-on, improved switching performance, and high resistance to latch-up. This article will focus on the application field and working principle of the IRG4BC30FDPBF.< p >< b > Application Fields < /b > < /p >The IRG4BC30FDPBF is a preferred device in many commercial and industrial applications due to its wide range of operating voltage ratings and its strong performance. It is ideal for motor control, uninterruptible power systems, AC and DC drives, welding, and other applications.The IRG4BC30FDPBF is used in a variety of motor control applications, such as those in the appliance, fan, pump, and car industries. It has a broad range of voltage ratings, which make it suitable for low-voltage and medium-voltage drives. It is also used in uninterruptible power systems, as it has a low current inrush and high-speed switching. The device is also used in welding and AC and DC drives.< p >< b > Working Principle < /b > < /p >The IRG4BC30FDPBF is a single IGBT device. It is a three-terminal semiconductor device, composed of an N-type gate region that is insulated from a P-type body layer. The device requires a low-voltage drive to gate turn-on and has a fast switching speed. The gate terminal is usually driven by a logic gate or switched direct control.The device works by providing an electric field in the channel between the gate and collector when the gate is activated. This induces a flow of electrons from the drain to the source. The current then flows through the collector-emitter junction and to the external load. The current can be switched off by reversing the gate voltage. This causes the electric field to be reversed, preventing the flow of electrons and stopping the current.The IRC4BC30FDPBF offers improved switching performance due to its integral anti-parallel diode. The anti-parallel diode reduces the occurrence of false triggering at switch-on, allowing the switching times to be much shorter than if the diode was not present. The device also has a high resistance to latch-up, making it ideal for use in safety-critical applications.< p >< b > Conclusion < /b > < /p >In conclusion, the IRG4BC30FDPBF is a single IGBT transistor device which has a wide range of applications due to its low-voltage drive requirements, improved switching performance, and high resistance to latch-up. It is used primarily in motor control, uninterruptible power systems, AC and DC drives, welding, and other similar applications. The device works through the application of an electric field between the gate and collector, inducing a flow of electrons from the drain to the source and allowing current to flow through the collector-emitter junction. The device also offers improved switching performance due to its integral anti-parallel diode and high resistance to latch-up.

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