IRG4BC10UDPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRG4BC10UDPBF is a basic type of insulated gate bipolar transistor (IGBT) categorized as single. It features a wide input voltage range and optimized design to reduce on-state resistance with a maximum junction temperature of 175°C. This type of device is made up of a built-in diode along with a smaller size and weight factor.

The device offers improved surge capability, low on-state voltage and low no-load losses thanks to its fast-switching low threshold voltage. It is also built with a low power loss module with a state-of-the-art structure as well as a proprietary control technology. IRG4BC10UDPBF offers an enhanced short circuit capability, improved reliability and stable characteristics. Thanks to its optimized design, the device provides excellent surge withstand ability.

The design and application fields of the device extend to various automotive and industrial applications. It is used in the fields of motor control, domestic appliances, lighting systems, air conditioners and in the power industry. The applied fields of the device exhibit the robust core structure of the device and its fast switching capabilities.

The base of the device is metallized to avoid electrical disturbances between the gate insulation layer and the gate electrode. The device also has a low on-state voltage thus reducing the power loss on switching by using the IGBT technology. Additionally, the device features a fast recovery diode to reduce the reverse total recovery time.

The working principle of the IRG4BC10UDPBF is based on the IGBT process. This device works by utilizing the IGBT principle that is a combination of the low conduction losses of a MOSFET along with the lower on-state voltage losses of a bipolar transistor. The unique characteristics of the IGBT enable the device to have low power dissipation and fast switching properties.

The IRG4BC10UDPBF works by switching the charge carriers in the main channel while the main channel current flows in the turn-off process. This works by the IGBT turning off, which cuts-off the collector current and the current between the drain and the source. The energy stored in the device’s capacitor is explicitly released in the form of a diode current in the device’s drain terminal.

The switching process of the device is done using the gate voltage applied to the transistor. The current in the main channel is switched by the gate voltage from the drain terminal. The switching operation of the device is based on the gate charge circulating in the main channel. This current is also controlled by the gate voltage. The devices power losses occur when the main channel current and the drain to source voltage are simultaneously interrupted, generating losses in the cross section of the device.

In conclusion, the IRG4BC10UDPBF is a single type of IGBT with a wide range of application fields and an optimized construction for improved performance. It features superior surge capability and low on-state voltage. The device works on the IGBT principle, wherein the current is switched by the gate voltage from the drain terminal and the power losses occur when the main channel current and the drain to source voltage are simultaneously interrupted.

The specific data is subject to PDF, and the above content is for reference