IRG4BC30FPBF Allicdata Electronics
Allicdata Part #:

IRG4BC30FPBF-ND

Manufacturer Part#:

IRG4BC30FPBF

Price: $ 1.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 31A 100W TO220AB
More Detail: IGBT 600V 31A 100W Through Hole TO-220AB
DataSheet: IRG4BC30FPBF datasheetIRG4BC30FPBF Datasheet/PDF
Quantity: 1463
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.68210
10 +: $ 1.51137
100 +: $ 1.21458
500 +: $ 0.99787
1000 +: $ 0.82681
Stock 1463Can Ship Immediately
$ 1.86
Specifications
Power - Max: 100W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 17A, 23 Ohm, 15V
Td (on/off) @ 25°C: 21ns/200ns
Gate Charge: 51nC
Input Type: Standard
Switching Energy: 230µJ (on), 1.18mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Current - Collector Pulsed (Icm): 124A
Current - Collector (Ic) (Max): 31A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRG4BC30FPBF is an insulated-gate bipolar transistor (IGBT) module integrated with an optimized gate drive, designed to change the voltage from low to high quickly. IGBT is a bi-directional semiconductor module which allows for controlled conduction using a static electric field established between an insulated gate and the switches body. This type of device is used in applications that require fast switching speeds and high input/output voltage because of its low switch resistance.

IRG4BC30FPBF IGBT module has a nominal output voltage of 360V and a current rating of 30A. It has excellent speed characteristics with a fast response time, a low gate turn-off time and low switching losses. This module also features soft-switching technologies and improved manufacturing processes to provide higher efficiency and faster switching capabilities.

The IRG4BC30FPBF IGBT module features a single-chip insulated gate series construction with high speed switching, low distortion and low gate charge for improved efficiency and power efficiency. The device is designed for low voltage Applications and can be used in high power switching applications such as AC drives, DC drives, wind turbine systems and solar inverters. It also operates in both high frequency and low frequency control Loop applications.

The IRG4BC30FPBF IGBT module use the concept of static electric fields between the gate and the collector that can be adjusted to reduce the switching losses and the turn-on delay between the gate and the collector. This allows the device to reach higher efficiency than other type of transistors while switching. When the gate voltage is applied to the electrode of the insulated gate, the electrons on the collector move to the base terminal where they are blocked, thus allowing the device to switch in a very short time.

The IGBT module also offers other features such as built-in thermal shut-down protection, short circuit protection and overload protection. Additionally, it features an advanced gate-drive circuit, which offers improved gate turn-off time, improved regulation and a wide operating temperature range.

The IRG4BC30FPBF IGBT module is a power semiconductor module used for high-power applications such as AC and DC drives, switching power supplies, motor controls, inverters and solar converters. This device has many advantages such as fast switching, low distortion, high efficiency and high current capability, as well as an integrated protection circuit to monitor over-temperature and over-voltage. Its convenient size allows it to be used in a variety of applications. This device can be used in a wide range of applications in industrial and consumer markets.

The specific data is subject to PDF, and the above content is for reference

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