IRG4PC50WPBF Allicdata Electronics

IRG4PC50WPBF Discrete Semiconductor Products

Allicdata Part #:

IRG4PC50WPBF-ND

Manufacturer Part#:

IRG4PC50WPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 55A 200W TO247AC
More Detail: IGBT 600V 55A 200W Through Hole TO-247AC
DataSheet: IRG4PC50WPBF datasheetIRG4PC50WPBF Datasheet/PDF
Quantity: 140
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 140Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 27A
Power - Max: 200W
Switching Energy: 80µJ (on), 320µJ (off)
Input Type: Standard
Gate Charge: 180nC
Td (on/off) @ 25°C: 46ns/120ns
Test Condition: 480V, 27A, 5 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

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IRG4PC50WPBF Application Field And Working Principle

The IRG4PC50WPBF is an IGBT (Insulated Gate Bipolar Transistor) that is in the Single type. Its reliable construction is well-suited for fast switchings and high frequency operations. It performs well in a low power form factor and can be used for a variety of applications, including AC and DC motor control, UPS & inverter systems, HVAC system drives, welding power supplies, and more.

Features

  • 850V-3200V drain-gate breakdown
  • Low saturation voltage
  • Low on-resistant
  • High switching speed
  • High frequency operation
  • Packed with gate and emitter gate resistors

Applications

  • AC and DC motor control
  • UPS & inverter systems
  • HVAC system drives
  • Welding power supply
  • Small server/storage applications
  • Railway traction/freight locomotive applications

Working Principle

The IRG4PC50WPBF is an Insulated Gate Bipolar Transistor (IGBT) that utilizes a insulated gate as the input terminal. It works by allowing the voltage applied to the gate to control the current flowing between the emitter and collector. The working principle of an IGBT is similar to that of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), with the main difference being the different gate construction and design. The insulated gate of an IGBT acts as a more efficient and powerful control element, allowing for operation at higher voltages and frequencies, as well as faster switching speeds.

The IGBT is a three-layer device composed of an N-type layer, a P-type layer, and an intrinsic layer. When there is no voltage applied to the gate, the intrinsic layer acts as a barrier between the N-type and P-type layers. Applying gate voltage creates an electric field that causes electrons to flow from the N-type to the P-type layer and current to flow between the emitter and collector. The voltage between the emitter and collector can then be controlled using the gate voltage. This allows for higher voltages and frequencies to be used, as well as faster switching speeds and greater accuracy.

The IRG4PC50WPBF has been designed to work well in a wide variety of applications, including AC and DC motor control, UPS & inverter systems, HVAC system drives, welding power supplies, and more. Its features make it an ideal solution for low power applications that require fast switching speeds and high frequency operation.

The specific data is subject to PDF, and the above content is for reference

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